MT46H4M32LFB5-5:K
- Mfr.Part #
- MT46H4M32LFB5-5:K
- Manufacturer
- Micron Technology
- Package / Case
- 90-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PARALLEL 90VFBGA
- Stock
- 47,740
- In Stock :
- 47,740
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Interleaved Burst Length :
- 24816
- Memory Width :
- 32
- Operating Temperature :
- 0°C~70°C TA
- Length :
- 13mm
- Mount :
- Surface Mount
- Organization :
- 4MX32
- Refresh Cycles :
- 4096
- I/O Type :
- COMMON
- Standby Current-Max :
- 0.00001A
- Base Part Number :
- MT46H4M32
- Supply Voltage :
- 1.8V
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Number of Terminations :
- 90
- Number of Ports :
- 1
- Clock Frequency :
- 200MHz
- Density :
- 128 Mb
- Height Seated (Max) :
- 1mm
- Mounting Type :
- Surface Mount
- Write Cycle Time - Word, Page :
- 15ns
- Access Time :
- 5ns
- Memory Interface :
- Parallel
- Nominal Supply Current :
- 110mA
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Output Characteristics :
- 3-STATE
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Pin Count :
- 90
- Peak Reflow Temperature (Cel) :
- 260
- Address Bus Width :
- 14b
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Format :
- DRAM
- Package / Case :
- 90-VFBGA
- Supply Voltage-Min (Vsup) :
- 1.7V
- Published :
- 2012
- Number of Pins :
- 90
- HTS Code :
- 8542.32.00.02
- Terminal Finish :
- TIN SILVER COPPER
- Voltage - Supply :
- 1.7V~1.95V
- Terminal Pitch :
- 0.8mm
- Supply Voltage-Max (Vsup) :
- 1.95V
- Packaging :
- Tray
- Operating Supply Voltage :
- 1.8V
- ECCN Code :
- EAR99
- Sequential Burst Length :
- 24816
- Memory Size :
- 128Mb 4M x 32
- Lead Free :
- Lead Free
- Number of Functions :
- 1
- Memory Type :
- Volatile
- Datasheets
- MT46H4M32LFB5-5:K

Memory Micron Technology MT46H4M32LFB5-5:K Overview
Introducing the Memory Micron Technology MT46H4M32LFB5-5:K, a high-performance IC DRAM component designed by Micron Technology. This product boasts a substantial 128Mbit capacity and utilizes a parallel interface, encapsulated in a compact 90VFBGA package. Ideal for applications requiring high-speed data processing and storage, this DRAM offers exceptional reliability and durability. Its compact design and power efficiency make it an excellent choice for designers focusing on minimizing device footprint while maximizing performance.
MT46H4M32LFB5-5:K Features
The MT46H4M32LFB5-5:K includes several key features that enhance its usability in various high-demand environments. These include low latency and power consumption, high data bandwidth, and robust temperature resilience, making it suitable for both commercial and industrial applications.
MT46H4M32LFB5-5:K Applications
- Consumer Electronics: Utilized in devices such as smartphones, tablets, and gaming consoles where quick access to large amounts of data is crucial.
- Computing: Integral for use in personal computers and servers for efficient processing and retrieval of data in high-load conditions.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) where rapid data processing is vital for real-time decision-making.
- Telecommunications: Used in networking hardware, such as routers and switches, to ensure swift data flow and buffer management across networks.
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