MT46H16M16LFBF-6:H
- Mfr.Part #
- MT46H16M16LFBF-6:H
- Manufacturer
- Micron Technology
- Package / Case
- 60-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 60VFBGA
- Stock
- 38,818
- In Stock :
- 38,818
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Operating Temperature :
- 0°C~70°C TA
- Additional Feature :
- AUTO/SELF REFRESH
- Organization :
- 16MX16
- Number of Functions :
- 1
- Access Time :
- 5ns
- Memory Width :
- 16
- Radiation Hardening :
- No
- Height Seated (Max) :
- 1mm
- Mount :
- Surface Mount
- Packaging :
- Tray
- Output Characteristics :
- 3-STATE
- Interleaved Burst Length :
- 24816
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- HTS Code :
- 8542.32.00.24
- Number of Pins :
- 60
- Memory Size :
- 256Mb 16M x 16
- Supply Voltage :
- 1.8V
- Memory Format :
- DRAM
- Number of Terminations :
- 60
- Supply Voltage-Min (Vsup) :
- 1.7V
- Number of Ports :
- 1
- Voltage - Supply :
- 1.7V~1.95V
- Memory Interface :
- Parallel
- Mounting Type :
- Surface Mount
- Terminal Pitch :
- 0.8mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Published :
- 2008
- Terminal Position :
- BOTTOM
- Refresh Cycles :
- 8192
- Data Bus Width :
- 16b
- Write Cycle Time - Word, Page :
- 12ns
- Sequential Burst Length :
- 24816
- Density :
- 256 Mb
- Package / Case :
- 60-VFBGA
- Operating Supply Voltage :
- 1.8V
- I/O Type :
- COMMON
- Base Part Number :
- MT46H16M16
- Clock Frequency :
- 166MHz
- Length :
- 9mm
- Terminal Finish :
- TIN SILVER COPPER
- Standby Current-Max :
- 0.00001A
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Address Bus Width :
- 15b
- Pin Count :
- 60
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pbfree Code :
- yes
- Memory Type :
- Volatile
- Supply Voltage-Max (Vsup) :
- 1.95V
- Nominal Supply Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MT46H16M16LFBF-6:H

Memory Micron Technology MT46H16M16LFBF-6:H Overview
The Memory Micron Technology MT46H16M16LFBF-6:H is a high-performance IC DRAM that boasts a capacity of 256Mbit, encapsulated in a compact 60VFBGA package. Engineered by Micron Technology, a leader in advanced memory solutions, this product provides robust, reliable, and high-speed data storage and retrieval. This DRAM's sophisticated design and cutting-edge technology make it ideal for applications requiring rapid access to large volumes of data. Its exceptional performance and efficiency are perfect for meeting the complex demands of modern electronic devices, making it a valuable asset for businesses aiming to leverage advanced memory technology for competitive advantage.
MT46H16M16LFBF-6:H Features
This particular model features a parallel interface, enabling quick data transfer rates and simultaneous multiple data transactions. Its efficient power consumption and low-voltage operation minimize energy costs while maintaining superior performance. The small form factor of the 60VFBGA package also allows for more compact and flexible PCB (Printed Circuit Board) designs, aiding in the reduction of overall device size without compromising the performance.
MT46H16M16LFBF-6:H Applications
- Mobile Devices: Utilized in smartphones and tablets to manage active applications and user interfaces efficiently, enhancing the device's responsiveness and multitasking capabilities.
- Consumer Electronics: Essential for use in televisions, digital cameras, and gaming consoles, where it helps in processing high-definition video and complex graphics smoothly.
- Automotive Systems: Deployed in advanced driver-assistance systems (ADAS) to process large amounts of sensor data quickly and accurately, improving vehicle safety and functionality.
- Networking: Crucial for routers and switches, facilitating rapid data packet storage and retrieval, which is key to maintaining high-speed network performance.
- Industrial Automation: Supports automation controls and machine vision systems by enabling fast processing and real-time decision making, crucial in modern manufacturing environments.
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