MT46H16M16LFBF-5:H

Manufacturer :

Micron Technology

Product Category :

Memory

Memory Format :

DRAM

Operating Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Published :

2008

Packaging :

Tray

Number of Pins :

60

Density :

256 Mb

Write Cycle Time - Word, Page :

15ns

HTS Code :

8542.32.00.24

Base Part Number :

MT46H16M16

Sequential Burst Length :

24816

Output Characteristics :

3-STATE

I/O Type :

COMMON

JESD-609 Code :

e1

Number of Terminations :

60

Interleaved Burst Length :

24816

Nominal Supply Current :

140mA

Clock Frequency :

200MHz

Package / Case :

60-VFBGA

Operating Temperature :

0°C~70°C TA

Terminal Finish :

TIN SILVER COPPER

Memory Interface :

Parallel

Voltage - Supply :

1.7V~1.95V

Length :

9mm

Supply Voltage-Min (Vsup) :

1.7V

Radiation Hardening :

No

Number of Functions :

1

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Memory Size :

256Mb 16M x 16

Access Time :

5ns

Supply Voltage :

1.8V

Pin Count :

60

Refresh Cycles :

8192

Memory Type :

Volatile

Memory Width :

16

ECCN Code :

EAR99

Mount :

Surface Mount

Standby Current-Max :

0.0003A

Supply Voltage-Max (Vsup) :

1.95V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Data Bus Width :

16b

Peak Reflow Temperature (Cel) :

260

Address Bus Width :

15b

Additional Feature :

AUTO/SELF REFRESH

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.8mm

Organization :

16MX16

Height Seated (Max) :

1mm

Number of Ports :

1