MT46H128M16LFDD-48 WT:C
- Mfr.Part #
- MT46H128M16LFDD-48 WT:C
- Manufacturer
- Micron Technology
- Package / Case
- 60-VFBGA
- Datasheet
- Download
- Description
- IC DRAM 2GBIT PARALLEL 60VFBGA
- Stock
- 518
- In Stock :
- 518
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage :
- 1.8V
- Memory Interface :
- Parallel
- Published :
- 2014
- Access Time :
- 5ns
- Sequential Burst Length :
- 24816
- Supply Voltage-Min (Vsup) :
- 1.7V
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -25°C~85°C TA
- Interleaved Burst Length :
- 24816
- Memory Width :
- 16
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Bulk
- Organization :
- 128MX16
- Qualification Status :
- Not Qualified
- Additional Feature :
- AUTO/SELF REFRESH
- Memory Format :
- DRAM
- Memory Type :
- Volatile
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Clock Frequency :
- 208MHz
- Write Cycle Time - Word, Page :
- 14.4ns
- Memory Density :
- 2147483648 bit
- Operating Mode :
- SYNCHRONOUS
- Supply Voltage-Max (Vsup) :
- 1.95V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PBGA-B60
- Number of Functions :
- 1
- Number of Ports :
- 1
- Length :
- 9mm
- Supply Current-Max :
- 0.09mA
- Voltage - Supply :
- 1.7V~1.95V
- Power Supplies :
- 1.8V
- Terminal Position :
- BOTTOM
- I/O Type :
- COMMON
- Standby Current-Max :
- 0.00001A
- Refresh Cycles :
- 8192
- Package / Case :
- 60-VFBGA
- Width :
- 8mm
- Output Characteristics :
- 3-STATE
- Mounting Type :
- Surface Mount
- Height Seated (Max) :
- 1mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Pitch :
- 0.8mm
- Number of Terminations :
- 60
- Memory Size :
- 2Gb 128M x 16
- Datasheets
- MT46H128M16LFDD-48 WT:C

Memory Micron Technology MT46H128M16LFDD-48 WT:C Overview
The Memory Micron Technology MT46H128M16LFDD-48 WT:C is a high-performance IC DRAM designed by Micron Technology, offering a robust 2Gbit capacity ideal for applications requiring large-scale, high-speed memory solutions. This dynamic random-access memory features a parallel interface and is packaged in a compact 60VFBGA format, ensuring high density and minimal footprint on system boards. Perfect for businesses seeking reliable and efficient memory solutions to enhance system performance and scalability.
MT46H128M16LFDD-48 WT:C Features
This integrated circuit boasts several key features that make it an attractive option for high-performance computing needs. The 2Gbit DRAM is designed for parallel communication, allowing for faster data transfer rates and improved overall efficiency. Packaged in a 60VFBGA, it offers enhanced thermal performance and reduced power consumption, making it an environmentally friendly choice for modern electronics.
MT46H128M16LFDD-48 WT:C Applications
- Computing Systems: Utilized in desktops, laptops, and servers where large memory capacity and speed are crucial for multitasking and high-performance computing tasks.
- Mobile Devices: Embedded in smartphones and tablets to manage multiple applications simultaneously while ensuring smooth performance and extended battery life.
- Gaming Consoles: Enhances gaming experiences by allowing faster loading times and more complex game mechanics thanks to its high data bandwidth capabilities.
- Telecommunications: Critical in telecommunications infrastructure, supporting the processing and storage of vast amounts of data essential for network management and service delivery.
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