MT45W4MW16BFB-708 L WT

Manufacturer :

Micron Technology

Product Category :

Memory

Base Part Number :

MT45W4MW16

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Memory Width :

16

ECCN Code :

3A991.B.2.A

Memory Format :

PSRAM

Supply Voltage-Max (Vsup) :

1.95V

Standby Current-Max :

0.0001A

Time@Peak Reflow Temperature-Max (s) :

30

I/O Type :

COMMON

Supply Voltage :

1.8V

Additional Feature :

SYNCHRONOUS BURST MODE POSSIBLE

Access Time (Max) :

70 ns

Terminal Finish :

Tin/Lead (Sn/Pb)

Width :

6mm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Power Supplies :

1.81.8/3V

Pin Count :

54

Reach Compliance Code :

not_compliant

Published :

2005

Voltage - Supply :

1.7V~1.95V

Organization :

4MX16

Operating Mode :

ASYNCHRONOUS

Operating Temperature :

-30°C~85°C TC

Memory Interface :

Parallel

Supply Current-Max :

0.035mA

Number of Functions :

1

Supply Voltage-Min (Vsup) :

1.7V

Terminal Pitch :

0.75mm

Write Cycle Time - Word, Page :

70ns

Mounting Type :

Surface Mount

Height Seated (Max) :

1mm

Surface Mount :

yes

Package / Case :

54-VFBGA

JESD-30 Code :

R-PBGA-B54

Number of Terminations :

54

Qualification Status :

Not Qualified

HTS Code :

8542.32.00.41

Memory Density :

67108864 bit

Memory Type :

Volatile

Packaging :

Box

JESD-609 Code :

e0

Output Characteristics :

3-STATE

Peak Reflow Temperature (Cel) :

235

Length :

8mm

Memory Size :

64Mb 4M x 16