MT45W4MW16BCGB-708 WT
- Mfr.Part #
- MT45W4MW16BCGB-708 WT
- Manufacturer
- Micron Technology
- Package / Case
- 54-VFBGA
- Datasheet
- Download
- Description
- IC PSRAM 64MBIT PARALLEL 54VFBGA
- Stock
- 43,529
- In Stock :
- 43,529
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Terminal Finish :
- TIN SILVER COPPER
- Memory Format :
- PSRAM
- HTS Code :
- 8542.32.00.41
- Number of Terminations :
- 54
- RoHS Status :
- ROHS3 Compliant
- Output Characteristics :
- 3-STATE
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 54
- Access Time (Max) :
- 70 ns
- Width :
- 6mm
- Mounting Type :
- Surface Mount
- Terminal Pitch :
- 0.75mm
- Memory Interface :
- Parallel
- Package / Case :
- 54-VFBGA
- Organization :
- 4MX16
- Packaging :
- Tray
- Supply Voltage-Max (Vsup) :
- 1.95V
- Memory Width :
- 16
- Memory Size :
- 64Mb 4M x 16
- Power Supplies :
- 1.81.8/3V
- ECCN Code :
- 3A991.B.2.A
- Pbfree Code :
- yes
- Memory Type :
- Volatile
- JESD-30 Code :
- R-PBGA-B54
- Supply Voltage-Min (Vsup) :
- 1.7V
- JESD-609 Code :
- e1
- Number of Functions :
- 1
- Memory Density :
- 67108864 bit
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Terminal Position :
- BOTTOM
- Operating Mode :
- SYNCHRONOUS
- Height Seated (Max) :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Standby Current-Max :
- 0.00014A
- I/O Type :
- COMMON
- Supply Voltage :
- 1.8V
- Write Cycle Time - Word, Page :
- 70ns
- Operating Temperature :
- -30°C~85°C TC
- Voltage - Supply :
- 1.7V~1.95V
- Surface Mount :
- yes
- Base Part Number :
- MT45W4MW16
- Supply Current-Max :
- 0.03mA
- Published :
- 2007
- Length :
- 8mm
- Datasheets
- MT45W4MW16BCGB-708 WT

Memory Micron Technology MT45W4MW16BCGB-708 WT Overview
The Memory Micron Technology MT45W4MW16BCGB-708 WT is a high-performance IC PSRAM (Pseudo Static Random Access Memory) featuring a 64Mbit storage capacity, tailored for applications demanding high-speed data buffering and storage. Designed by Micron Technology, this memory module integrates seamlessly into a variety of sophisticated digital systems, enhancing both system reliability and performance. Its compact 54-VFBGA (Very Fine Ball Grid Array) package ensures minimized space usage while maintaining robustness and excellent thermal management, making it an ideal choice for space-constrained applications.
MT45W4MW16BCGB-708 WT Features
This PSRAM device offers a parallel interface, providing rapid data access and high throughput capabilities. Its design is optimized for low power consumption while maintaining a broad operating temperature range, making it suitable for rigorous industrial environments. Additionally, the 64Mbit capacity is well-suited for systems requiring large, temporary data storage without the latency typically associated with non-volatile memory technologies.
MT45W4MW16BCGB-708 WT Applications
- Mobile Devices: Utilized in smartphones and tablets to extend memory capabilities for enhanced multitasking and smooth application performance.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) to facilitate rapid data processing and real-time decision-making.
- Industrial Automation: Integrated into PLCs (Programmable Logic Controllers) and other industrial control systems for efficient task management and operational data buffering.
- Consumer Electronics: Used in gaming consoles and high-definition television sets to improve user experience through faster data access and improved system responsiveness.
- Networking Equipment: Essential for routers and switches, providing the necessary data buffer to manage high-speed network traffic effectively.
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