MT44K32M18RB-093E:A
- Mfr.Part #
- MT44K32M18RB-093E:A
- Manufacturer
- Micron Technology
- Package / Case
- 168-TBGA
- Datasheet
- Download
- Description
- IC DRAM 576MBIT PARALLEL 168BGA
- Stock
- 20,068
- In Stock :
- 20,068
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- ECCN Code :
- EAR99
- Memory Width :
- 18
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- 168-TBGA
- Address Bus Width :
- 24b
- Packaging :
- Tray
- Operating Supply Voltage :
- 1.35V
- Number of Terminations :
- 168
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 0°C~95°C TC
- Base Part Number :
- MT44K32M18
- Height Seated (Max) :
- 1.2mm
- Number of Ports :
- 1
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 1.35V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Supply Voltage-Max (Vsup) :
- 1.42V
- Additional Feature :
- AUTO/SELF REFRESH
- Organization :
- 32MX18
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 168
- Clock Frequency :
- 1067MHz
- Max Frequency :
- 2.133GHz
- Terminal Pitch :
- 1mm
- Terminal Position :
- BOTTOM
- Memory Size :
- 576Mb 32M x 18
- Access Time :
- 8ns
- Radiation Hardening :
- No
- Voltage - Supply :
- 1.28V~1.42V
- Density :
- 576 Mb
- Number of Functions :
- 1
- Contact Plating :
- Copper, Silver, Tin
- Data Bus Width :
- 18b
- Published :
- 2009
- Length :
- 13.5mm
- Memory Interface :
- Parallel
- HTS Code :
- 8542.32.00.32
- Memory Format :
- DRAM
- Factory Lead Time :
- 5 Weeks
- Pin Count :
- 168
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Lead Free :
- Lead Free
- Supply Voltage-Min (Vsup) :
- 1.28V
- JESD-609 Code :
- e1
- Memory Type :
- Volatile
- Datasheets
- MT44K32M18RB-093E:A

Memory Micron Technology MT44K32M18RB-093E:A Overview
The Memory Micron Technology MT44K32M18RB-093E:A is a high-performance IC DRAM designed to meet the rigorous demands of sophisticated electronic environments. Offering a substantial 576Mbit storage capacity within a 168-ball BGA (ball grid array) package, this memory module is engineered to provide reliable, high-speed data transmission and low power consumption. Its robust design and Micron's advanced technology make it an ideal solution for manufacturers looking to enhance system performance with high density and stability. The Memory Micron Technology MT44K32M18RB-093E:A is tailored to support a wide array of applications, ensuring both versatility and efficiency in large scale deployments.
MT44K32M18RB-093E:A Features
This DRAM module boasts several key features including a parallel interface for improved data throughput and reduced latency. It supports a variety of clock speeds, enhancing its compatibility with diverse system architectures. Additionally, its compact 168BGA packaging ensures a reduced footprint on the PCB, making it suitable for space-constrained applications while maintaining optimal thermal performance.
MT44K32M18RB-093E:A Applications
- Computing Systems: Enhances the performance of both desktop and mobile computing systems by providing high-speed, stable memory storage.
- Networking Equipment: Utilized in routers, switches, and other network infrastructure equipment for buffer and caching functions, facilitating faster and more reliable network communications.
- Consumer Electronics: Integral to enhancing user experience in devices such as smart TVs and gaming consoles by speeding up response times and increasing reliability.
- Embedded Systems: Provides robust memory solutions for complex embedded systems used in industrial automation and automotive applications.
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