MT41K512M8RH-125 M:E
- Mfr.Part #
- MT41K512M8RH-125 M:E
- Manufacturer
- Micron Technology
- Package / Case
- 78-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 4GBIT PARALLEL 78FBGA
- Stock
- 43,760
- In Stock :
- 43,760
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Memory Width :
- 8
- Surface Mount :
- yes
- Interleaved Burst Length :
- 8
- Organization :
- 512MX8
- Number of Functions :
- 1
- Package / Case :
- 78-TFBGA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Refresh Cycles :
- 8192
- Supply Voltage-Min (Vsup) :
- 1.283V
- Memory Density :
- 4294967296 bit
- Supply Current-Max :
- 0.213mA
- HTS Code :
- 8542.32.00.36
- ECCN Code :
- EAR99
- Memory Size :
- 4Gb 512M x 8
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PBGA-B78
- Operating Mode :
- SYNCHRONOUS
- Standby Current-Max :
- 0.012A
- Sequential Burst Length :
- 8
- Additional Feature :
- AUTO/SELF REFRESH
- Width :
- 9mm
- Supply Voltage :
- 1.35V
- Memory Type :
- Volatile
- Output Characteristics :
- 3-STATE
- Height Seated (Max) :
- 1.2mm
- I/O Type :
- COMMON
- Supply Voltage-Max (Vsup) :
- 1.45V
- Base Part Number :
- MT41K512M8
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Access Time :
- 13.75ns
- Terminal Pitch :
- 0.8mm
- Pin Count :
- 78
- Memory Interface :
- Parallel
- Voltage - Supply :
- 1.283V~1.45V
- Terminal Position :
- BOTTOM
- Power Supplies :
- 1.35V
- Length :
- 10.5mm
- Operating Temperature :
- 0°C~95°C TC
- Memory Format :
- DRAM
- Clock Frequency :
- 800MHz
- Number of Ports :
- 1
- Packaging :
- Tray
- Number of Terminations :
- 78
- Datasheets
- MT41K512M8RH-125 M:E

Memory Micron Technology MT41K512M8RH-125 M:E Overview
The Memory Micron Technology MT41K512M8RH-125 M:E is a high-performance 4Gbit DRAM integrated circuit from Micron Technology, renowned for its reliability and efficiency in handling large-scale memory requirements. This component is engineered in a compact 78FBGA package, making it ideal for applications where space is at a premium but large memory capacity is essential. With its advanced design, this product supports a wide range of industrial applications, offering high-speed data transfer and low power consumption, thereby enhancing the overall system performance and reducing operational costs.
MT41K512M8RH-125 M:E Features
This DRAM IC offers several features that make it a standout choice for manufacturers and developers. It operates on a parallel interface, which facilitates quicker and more efficient data handling capabilities than serial alternatives. The device is designed to operate at a nominal voltage, promoting energy efficiency without compromising performance. Additionally, its robust architecture ensures high durability and reliability under varied environmental conditions.
MT41K512M8RH-125 M:E Applications
- Server Systems: Used in server motherboards to enhance multitasking capabilities and handle large databases effectively.
- Networking Equipment: Applied in routers and switches, facilitating improved data throughput and buffer management in complex network infrastructures.
- Consumer Electronics: Integrated into high-performance gaming consoles and smart TVs to manage high-resolution video processing and gaming graphics smoothly.
- Automotive Systems: Employed in advanced driver-assistance systems (ADAS) to process large amounts of data from sensors and cameras in real-time, ensuring reliable and responsive vehicle operation.
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
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