MT41K512M8RH-125 M:E

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Mfr.Part #
MT41K512M8RH-125 M:E
Manufacturer
Micron Technology
Package / Case
78-TFBGA
Datasheet
Download
Description
IC DRAM 4GBIT PARALLEL 78FBGA
Stock
43,760
In Stock :
43,760

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Manufacturer :
Micron Technology
Product Category :
Memory
Memory Width :
8
Surface Mount :
yes
Interleaved Burst Length :
8
Organization :
512MX8
Number of Functions :
1
Package / Case :
78-TFBGA
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Refresh Cycles :
8192
Supply Voltage-Min (Vsup) :
1.283V
Memory Density :
4294967296 bit
Supply Current-Max :
0.213mA
HTS Code :
8542.32.00.36
ECCN Code :
EAR99
Memory Size :
4Gb 512M x 8
Qualification Status :
Not Qualified
Mounting Type :
Surface Mount
JESD-30 Code :
R-PBGA-B78
Operating Mode :
SYNCHRONOUS
Standby Current-Max :
0.012A
Sequential Burst Length :
8
Additional Feature :
AUTO/SELF REFRESH
Width :
9mm
Supply Voltage :
1.35V
Memory Type :
Volatile
Output Characteristics :
3-STATE
Height Seated (Max) :
1.2mm
I/O Type :
COMMON
Supply Voltage-Max (Vsup) :
1.45V
Base Part Number :
MT41K512M8
RoHS Status :
ROHS3 Compliant
Published :
2013
Access Time :
13.75ns
Terminal Pitch :
0.8mm
Pin Count :
78
Memory Interface :
Parallel
Voltage - Supply :
1.283V~1.45V
Terminal Position :
BOTTOM
Power Supplies :
1.35V
Length :
10.5mm
Operating Temperature :
0°C~95°C TC
Memory Format :
DRAM
Clock Frequency :
800MHz
Number of Ports :
1
Packaging :
Tray
Number of Terminations :
78
Introducing Memory Micron Technology MT41K512M8RH-125 M:E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:78-TFBGA, Mounting Type:Surface Mount, Base Part Number:MT41K512M8, Operating Temperature:0°C~95°C TC, Number of Terminations:78, MT41K512M8RH-125 M:E pinout, MT41K512M8RH-125 M:E datasheet PDF, MT41K512M8RH-125 M:E amp .Beyond Memory Micron Technology MT41K512M8RH-125 M:E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT41K512M8RH-125 M:E


Memory Micron Technology MT41K512M8RH-125 M:E Overview

The Memory Micron Technology MT41K512M8RH-125 M:E is a high-performance 4Gbit DRAM integrated circuit from Micron Technology, renowned for its reliability and efficiency in handling large-scale memory requirements. This component is engineered in a compact 78FBGA package, making it ideal for applications where space is at a premium but large memory capacity is essential. With its advanced design, this product supports a wide range of industrial applications, offering high-speed data transfer and low power consumption, thereby enhancing the overall system performance and reducing operational costs.

MT41K512M8RH-125 M:E Features

This DRAM IC offers several features that make it a standout choice for manufacturers and developers. It operates on a parallel interface, which facilitates quicker and more efficient data handling capabilities than serial alternatives. The device is designed to operate at a nominal voltage, promoting energy efficiency without compromising performance. Additionally, its robust architecture ensures high durability and reliability under varied environmental conditions.

MT41K512M8RH-125 M:E Applications

  • Server Systems: Used in server motherboards to enhance multitasking capabilities and handle large databases effectively.
  • Networking Equipment: Applied in routers and switches, facilitating improved data throughput and buffer management in complex network infrastructures.
  • Consumer Electronics: Integrated into high-performance gaming consoles and smart TVs to manage high-resolution video processing and gaming graphics smoothly.
  • Automotive Systems: Employed in advanced driver-assistance systems (ADAS) to process large amounts of data from sensors and cameras in real-time, ensuring reliable and responsive vehicle operation.
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