MT41K512M8RH-125 IT:E

Manufacturer :

Micron Technology

Product Category :

Memory

Power Supplies :

1.35V

Supply Voltage :

1.35V

Access Time :

13.75ns

Terminal Pitch :

0.8mm

Standby Current-Max :

0.016A

Memory Type :

Volatile

Width :

9mm

Surface Mount :

yes

I/O Type :

COMMON

Terminal Position :

BOTTOM

Height Seated (Max) :

1.2mm

ECCN Code :

EAR99

Output Characteristics :

3-STATE

Memory Size :

4Gb 512M x 8

Sequential Burst Length :

8

Published :

2013

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN SILVER COPPER

Package / Case :

78-TFBGA

JESD-609 Code :

e1

Supply Current-Max :

0.22mA

Operating Temperature :

-40°C~95°C TC

Additional Feature :

AUTO/SELF REFRESH

Operating Mode :

SYNCHRONOUS

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.5mm

Supply Voltage-Max (Vsup) :

1.45V

Base Part Number :

MT41K512M8

Interleaved Burst Length :

8

Clock Frequency :

800MHz

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

78

Packaging :

Tray

HTS Code :

8542.32.00.36

JESD-30 Code :

R-PBGA-B78

Number of Ports :

1

Number of Functions :

1

Organization :

512MX8

Memory Width :

8

Qualification Status :

Not Qualified

Supply Voltage-Min (Vsup) :

1.283V

Refresh Cycles :

8192

Memory Interface :

Parallel

Voltage - Supply :

1.283V~1.45V

Memory Density :

4294967296 bit

Mounting Type :

Surface Mount

Memory Format :

DRAM