MT41K512M8RH-125:E

Manufacturer :

Micron Technology

Product Category :

Memory

Height Seated (Max) :

1.2mm

Number of Functions :

1

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Number of Ports :

1

Refresh Cycles :

8192

Voltage - Supply :

1.283V~1.45V

Operating Temperature :

0°C~95°C TC

Address Bus Width :

19b

Published :

2013

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

I/O Type :

COMMON

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

30

Density :

4 GB

Memory Size :

4Gb 512M x 8

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tray

Memory Type :

Volatile

HTS Code :

8542.32.00.36

Supply Voltage :

1.35V

Clock Frequency :

800MHz

Base Part Number :

MT41K512M8

Supply Voltage-Min (Vsup) :

1.283V

Length :

10.5mm

Interleaved Burst Length :

8

Package / Case :

78-TFBGA

Organization :

512MX8

Memory Format :

DRAM

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Max (Vsup) :

1.45V

Output Characteristics :

3-STATE

Sequential Burst Length :

8

Data Bus Width :

8B

Pin Count :

78

Lead Free :

Lead Free

JESD-609 Code :

e1

Operating Supply Voltage :

1.35V

Access Time :

13.75ns

Mount :

Surface Mount

Terminal Pitch :

0.8mm

Radiation Hardening :

No

Additional Feature :

AUTO/SELF REFRESH

Pbfree Code :

yes

Supply Current-Max :

0.22mA

Memory Width :

8

Standby Current-Max :

0.016A

Number of Terminations :

78

Number of Pins :

78