MT41K512M8RH-107:E

Manufacturer :

Micron Technology

Product Category :

Memory

Number of Pins :

78

Packaging :

Tray

Published :

2013

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

1.45V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Interleaved Burst Length :

8

Organization :

512MX8

Additional Feature :

AUTO/SELF REFRESH

Data Bus Width :

8B

Memory Type :

Volatile

Memory Format :

DRAM

Memory Width :

8

Number of Ports :

1

Mounting Type :

Surface Mount

Length :

10.5mm

Sequential Burst Length :

8

Number of Functions :

1

Lead Free :

Lead Free

Supply Voltage :

1.35V

Voltage - Supply :

1.283V~1.45V

Memory Size :

4Gb 512M x 8

Radiation Hardening :

No

Supply Voltage-Min (Vsup) :

1.283V

JESD-609 Code :

e1

Operating Supply Voltage :

1.35V

HTS Code :

8542.32.00.36

Terminal Position :

BOTTOM

Terminal Pitch :

0.8mm

Package / Case :

78-TFBGA

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Number of Terminations :

78

Operating Temperature :

0°C~95°C TC

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Access Time :

20ns

Standby Current-Max :

0.016A

Refresh Cycles :

8192

Output Characteristics :

3-STATE

Clock Frequency :

933MHz

Base Part Number :

MT41K512M8

Supply Current-Max :

0.251mA

Density :

4 GB

Address Bus Width :

19b

ECCN Code :

EAR99