MT41K512M4HX-15E:D

Manufacturer :

Micron Technology

Product Category :

Memory

Peak Reflow Temperature (Cel) :

260

Packaging :

Tray

Operating Temperature :

0°C~95°C TC

Standby Current-Max :

0.012A

Sequential Burst Length :

8

Base Part Number :

MT41K512M4

Interleaved Burst Length :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2011

Clock Frequency :

667MHz

Package / Case :

78-TFBGA

Terminal Pitch :

0.8mm

Supply Voltage-Min (Vsup) :

1.283V

Memory Format :

DRAM

Refresh Cycles :

8192

Mounting Type :

Surface Mount

Voltage - Supply :

1.283V~1.45V

Memory Density :

2147483648 bit

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Pin Count :

78

Memory Width :

4

Output Characteristics :

3-STATE

Supply Voltage :

1.35V

Memory Interface :

Parallel

Memory Size :

2Gb 512M x 4

Supply Current-Max :

0.385mA

Time@Peak Reflow Temperature-Max (s) :

30

Number of Ports :

1

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Organization :

512MX4

Access Time :

13.5ns

Terminal Position :

BOTTOM

Pbfree Code :

yes

Supply Voltage-Max (Vsup) :

1.45V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Surface Mount :

yes

Lead Free :

Lead Free

Operating Supply Voltage :

1.35V

Additional Feature :

AUTO/SELF REFRESH

Width :

9mm

JESD-30 Code :

R-PBGA-B78

Operating Mode :

SYNCHRONOUS

Height Seated (Max) :

1.2mm

Number of Terminations :

78

I/O Type :

COMMON

Memory Type :

Volatile

HTS Code :

8542.32.00.36

Length :

11.5mm