MT41K512M16TNA-125 IT:E

Manufacturer :

Micron Technology

Product Category :

Memory

Organization :

512MX16

RoHS Status :

ROHS3 Compliant

Supply Voltage-Min (Vsup) :

1.283V

JESD-609 Code :

e1

I/O Type :

COMMON

Mounting Type :

Surface Mount

Memory Width :

16

Supply Voltage :

1.35V

Height Seated (Max) :

1.2mm

Published :

2015

Refresh Cycles :

8192

Time@Peak Reflow Temperature-Max (s) :

30

Memory Type :

Volatile

Voltage - Supply :

1.283V~1.45V

Memory Format :

DRAM

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Surface Mount :

yes

Packaging :

Tray

JESD-30 Code :

R-PBGA-B96

Access Time :

13.5ns

Number of Functions :

1

Interleaved Burst Length :

8

Memory Size :

8Gb 512M x 16

Supply Current-Max :

0.266mA

Operating Temperature :

-40°C~95°C TC

Terminal Pitch :

0.8mm

Number of Terminations :

96

Standby Current-Max :

0.036A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage-Max (Vsup) :

1.425V

Additional Feature :

AUTO/SELF REFRESH

Peak Reflow Temperature (Cel) :

260

Clock Frequency :

800MHz

Package / Case :

96-TFBGA

Width :

10mm

Sequential Burst Length :

8

Power Supplies :

1.35V

Length :

14mm

Memory Interface :

Parallel

Memory Density :

8589934592 bit

Output Characteristics :

3-STATE

Number of Ports :

1

Operating Mode :

SYNCHRONOUS

Terminal Position :

BOTTOM

Base Part Number :

MT41K512M16