MT41K512M16TNA-125:E

Manufacturer :

Micron Technology

Product Category :

Memory

Number of Terminations :

96

Interleaved Burst Length :

8

Base Part Number :

MT41K512M16

Organization :

512MX16

Height Seated (Max) :

1.2mm

Data Bus Width :

16b

Lead Free :

Lead Free

Operating Supply Voltage :

1.35V

Mount :

Surface Mount

Number of Functions :

1

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tray

Package / Case :

96-TFBGA

Additional Feature :

AUTO/SELF REFRESH

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Supply Voltage :

1.35V

Supply Voltage-Max (Vsup) :

1.425V

I/O Type :

COMMON

Address Bus Width :

19b

Published :

2015

Output Characteristics :

3-STATE

Memory Format :

DRAM

Memory Type :

Volatile

Supply Voltage-Min (Vsup) :

1.283V

Memory Width :

16

Voltage - Supply :

1.283V~1.45V

Sequential Burst Length :

8

Standby Current-Max :

0.036A

Terminal Position :

BOTTOM

Number of Pins :

96

Number of Ports :

1

Terminal Pitch :

0.8mm

Clock Frequency :

800MHz

Radiation Hardening :

No

Density :

8 GB

Nominal Supply Current :

314mA

Peak Reflow Temperature (Cel) :

260

Refresh Cycles :

8192

Length :

14mm

JESD-609 Code :

e1

Memory Interface :

Parallel

Access Time :

13.5ns

Operating Temperature :

0°C~95°C TC

Memory Size :

8Gb 512M x 16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)