MT41K512M16TNA-107:E

Manufacturer :

Micron Technology

Product Category :

Memory

Radiation Hardening :

No

Address Bus Width :

18b

Published :

2015

Density :

8 GB

Supply Voltage-Max (Vsup) :

1.425V

Data Bus Width :

16b

Supply Voltage-Min (Vsup) :

1.283V

Terminal Position :

BOTTOM

Memory Type :

Volatile

Operating Temperature :

0°C~95°C TC

Memory Interface :

Parallel

Voltage - Supply :

1.283V~1.45V

Memory Format :

DRAM

Additional Feature :

AUTO/SELF REFRESH

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Memory Size :

8Gb 512M x 16

Mounting Type :

Surface Mount

Access Time :

20ns

Organization :

512MX16

Clock Frequency :

933MHz

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tray

Number of Pins :

96

Package / Case :

96-TFBGA

Memory Width :

16

Number of Terminations :

96

Supply Voltage :

1.35V

Length :

14mm

JESD-609 Code :

e1

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.8mm

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

1.35V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Number of Ports :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Nominal Supply Current :

275mA

Number of Functions :

1