MT41K256M8DA-15E:M
- Mfr.Part #
- MT41K256M8DA-15E:M
- Manufacturer
- Micron Technology
- Package / Case
- 78-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 2GBIT PARALLEL 78FBGA
- Stock
- 14,260
- In Stock :
- 14,260
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Base Part Number :
- MT41K256M8
- Number of Functions :
- 1
- Memory Interface :
- Parallel
- Mounting Type :
- Surface Mount
- Organization :
- 256MX8
- Data Bus Width :
- 8B
- I/O Type :
- COMMON
- Density :
- 2 GB
- Number of Ports :
- 1
- Memory Format :
- DRAM
- Output Characteristics :
- 3-STATE
- Pbfree Code :
- yes
- Interleaved Burst Length :
- 8
- Nominal Supply Current :
- 125mA
- Pin Count :
- 78
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8542.32.00.36
- Terminal Position :
- BOTTOM
- Additional Feature :
- AUTO/SELF REFRESH
- Address Bus Width :
- 18b
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Supply :
- 1.283V~1.45V
- Memory Size :
- 2Gb 256M x 8
- Package / Case :
- 78-TFBGA
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Access Time :
- 13.5ns
- Packaging :
- Tray
- Number of Pins :
- 78
- Terminal Pitch :
- 0.8mm
- Supply Voltage :
- 1.35V
- Refresh Cycles :
- 8192
- Clock Frequency :
- 667MHz
- JESD-609 Code :
- e3
- Sequential Burst Length :
- 8
- Height Seated (Max) :
- 1.2mm
- Operating Supply Voltage :
- 1.35V
- Operating Temperature :
- 0°C~95°C TC
- Published :
- 2012
- Radiation Hardening :
- No
- Length :
- 10.5mm
- Voltage :
- 1.35V
- Standby Current-Max :
- 0.012A
- Number of Terminations :
- 78
- Terminal Finish :
- MATTE TIN
- Memory Width :
- 8
- Memory Type :
- Volatile
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- MT41K256M8DA-15E:M

Memory Micron Technology MT41K256M8DA-15E:M Overview
The Memory Micron Technology MT41K256M8DA-15E:M is a high-performance integrated circuit that belongs to the dynamic random-access memory (DRAM) family. Specifically designed to meet the rigorous demands of substantial data throughput and storage, this 2GBit DRAM utilizes a parallel interface and is packaged in a compact 78-ball fine-pitch ball grid array (FBGA). This product's architecture ensures high-speed data transfer and low power consumption, making it an ideal solution for applications requiring large-volume, fast-access memory storage.
MT41K256M8DA-15E:M Features
This IC features a density of 2GBit, organized as 256M words by 8 bits, which allows for robust data management and storage capabilities. The use of advanced technology in its design enables this memory module to achieve excellent stability and reliability under a broad range of operating conditions. Moreover, its parallel interface provides a faster data rate compared to serial interfaces, which is critical for performance-intensive applications.
MT41K256M8DA-15E:M Applications
- Enterprise Servers and Data Centers: Used in server RAM to manage large volumes of data and facilitate rapid access to frequently used information, enhancing server efficiency and performance.
- High-Performance Computing Systems: Critical for applications requiring high-speed computing capabilities, such as scientific simulations and complex computations.
- Advanced Graphics and Video Editing Platforms: Provides the necessary speed and capacity for handling large graphics files and video content, which is essential for smooth rendering and editing processes.
- Telecommunications Equipment: Supports telecommunications infrastructure by enabling quick processing and storage of vast amounts of data, essential for network management and optimization.
- Automotive Electronics: Utilized in advanced driver-assistance systems (ADAS) and other in-vehicle networks that require high memory capacity and speed for real-time processing.
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