MT41K256M16TW-107 AAT:P

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Mfr.Part #
MT41K256M16TW-107 AAT:P
Manufacturer
Micron Technology
Package / Case
96-TFBGA
Datasheet
Download
Description
IC DRAM 4GBIT PARALLEL 96FBGA
Stock
4,900
In Stock :
4,900

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Manufacturer :
Micron Technology
Product Category :
Memory
Series :
Automotive, AEC-Q100
Memory Format :
DRAM
Memory Type :
Volatile
Supply Voltage :
1.35V
Voltage - Supply :
1.283V~1.45V
Operating Temperature :
-40°C~105°C TC
Memory Size :
4Gb 256M x 16
JESD-30 Code :
R-PBGA-B96
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
96
Memory Interface :
Parallel
Memory Width :
16
Supply Voltage-Max (Vsup) :
1.45V
Peak Reflow Temperature (Cel) :
260
Surface Mount :
yes
Length :
14mm
Terminal Pitch :
0.8mm
Factory Lead Time :
12 Weeks
Organization :
256MX16
Memory Density :
4294967296 bit
Mounting Type :
Surface Mount
Access Time :
20ns
JESD-609 Code :
e1
RoHS Status :
ROHS3 Compliant
Width :
8mm
Operating Mode :
SYNCHRONOUS
Number of Ports :
1
Published :
2016
Height Seated (Max) :
1.2mm
Supply Voltage-Min (Vsup) :
1.283V
Package / Case :
96-TFBGA
Terminal Position :
BOTTOM
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
Clock Frequency :
933MHz
Packaging :
Tray
Number of Functions :
1
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Introducing Memory Micron Technology MT41K256M16TW-107 AAT:P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~105°C TC, Number of Terminations:96, Mounting Type:Surface Mount, Package / Case:96-TFBGA, MT41K256M16TW-107 AAT:P pinout, MT41K256M16TW-107 AAT:P datasheet PDF, MT41K256M16TW-107 AAT:P amp .Beyond Memory Micron Technology MT41K256M16TW-107 AAT:P ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT41K256M16TW-107 AAT:P


Memory Micron Technology MT41K256M16TW-107 AAT:P Overview

Introducing the Memory Micron Technology MT41K256M16TW-107 AAT:P, a high-capacity 4Gbit DRAM component engineered by Micron Technology. This product is encased in a compact 96FBGA package and is designed to deliver robust parallel processing capabilities. The advanced manufacturing technology ensures high-speed data transfer and low power consumption, making it an ideal solution for applications demanding significant memory and performance. With its state-of-the-art architecture, this DRAM aims to boost system efficiency and reliability, addressing the complex needs of modern technology infrastructures.

MT41K256M16TW-107 AAT:P Features

The MT41K256M16TW-107 AAT:P comes packed with features that enhance its utility and performance in demanding environments. Key features include a large 4Gbit storage capacity, high data transfer speeds, and a highly efficient parallel interface. Its compact 96FBGA packaging makes it suitable for dense circuit designs, facilitating better device miniaturization while maintaining optimal thermal performance. Additionally, its low power consumption helps in extending the battery life of portable devices, making it a versatile choice for numerous applications.

MT41K256M16TW-107 AAT:P Applications

  • Smartphones and Tablets: Provides the memory necessary for multitasking and running high-demand applications smoothly.
  • Personal Computers and Laptops: Enhances system performance by supporting higher memory bandwidth for advanced multitasking.
  • Servers: Crucial for server applications where large volumes of data are processed and memory reliability is paramount.
  • Embedded Systems: Ideal for use in embedded applications due to its compact size and power efficiency, supporting sophisticated on-board features and real-time processing.
  • Automotive Systems: Used in advanced driver-assistance systems (ADAS) and other in-vehicle infotainment systems, where reliable and fast memory is crucial.
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