MT41K256M16TW-107 AAT:P
- Mfr.Part #
- MT41K256M16TW-107 AAT:P
- Manufacturer
- Micron Technology
- Package / Case
- 96-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 4GBIT PARALLEL 96FBGA
- Stock
- 4,900
- In Stock :
- 4,900
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Series :
- Automotive, AEC-Q100
- Memory Format :
- DRAM
- Memory Type :
- Volatile
- Supply Voltage :
- 1.35V
- Voltage - Supply :
- 1.283V~1.45V
- Operating Temperature :
- -40°C~105°C TC
- Memory Size :
- 4Gb 256M x 16
- JESD-30 Code :
- R-PBGA-B96
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 96
- Memory Interface :
- Parallel
- Memory Width :
- 16
- Supply Voltage-Max (Vsup) :
- 1.45V
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Length :
- 14mm
- Terminal Pitch :
- 0.8mm
- Factory Lead Time :
- 12 Weeks
- Organization :
- 256MX16
- Memory Density :
- 4294967296 bit
- Mounting Type :
- Surface Mount
- Access Time :
- 20ns
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Width :
- 8mm
- Operating Mode :
- SYNCHRONOUS
- Number of Ports :
- 1
- Published :
- 2016
- Height Seated (Max) :
- 1.2mm
- Supply Voltage-Min (Vsup) :
- 1.283V
- Package / Case :
- 96-TFBGA
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
- Clock Frequency :
- 933MHz
- Packaging :
- Tray
- Number of Functions :
- 1
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Datasheets
- MT41K256M16TW-107 AAT:P

Memory Micron Technology MT41K256M16TW-107 AAT:P Overview
Introducing the Memory Micron Technology MT41K256M16TW-107 AAT:P, a high-capacity 4Gbit DRAM component engineered by Micron Technology. This product is encased in a compact 96FBGA package and is designed to deliver robust parallel processing capabilities. The advanced manufacturing technology ensures high-speed data transfer and low power consumption, making it an ideal solution for applications demanding significant memory and performance. With its state-of-the-art architecture, this DRAM aims to boost system efficiency and reliability, addressing the complex needs of modern technology infrastructures.
MT41K256M16TW-107 AAT:P Features
The MT41K256M16TW-107 AAT:P comes packed with features that enhance its utility and performance in demanding environments. Key features include a large 4Gbit storage capacity, high data transfer speeds, and a highly efficient parallel interface. Its compact 96FBGA packaging makes it suitable for dense circuit designs, facilitating better device miniaturization while maintaining optimal thermal performance. Additionally, its low power consumption helps in extending the battery life of portable devices, making it a versatile choice for numerous applications.
MT41K256M16TW-107 AAT:P Applications
- Smartphones and Tablets: Provides the memory necessary for multitasking and running high-demand applications smoothly.
- Personal Computers and Laptops: Enhances system performance by supporting higher memory bandwidth for advanced multitasking.
- Servers: Crucial for server applications where large volumes of data are processed and memory reliability is paramount.
- Embedded Systems: Ideal for use in embedded applications due to its compact size and power efficiency, supporting sophisticated on-board features and real-time processing.
- Automotive Systems: Used in advanced driver-assistance systems (ADAS) and other in-vehicle infotainment systems, where reliable and fast memory is crucial.
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