MT41J256M4JP-15E:G

Manufacturer :

Micron Technology

Product Category :

Memory

Lead Free :

Lead Free

Radiation Hardening :

No

Refresh Cycles :

8192

Memory Size :

1Gb 256M x 4

Nominal Supply Current :

125mA

JESD-609 Code :

e1

Memory Format :

DRAM

ECCN Code :

EAR99

Height Seated (Max) :

1.2mm

Additional Feature :

AUTO/SELF REFRESH

Sequential Burst Length :

8

RoHS Status :

ROHS3 Compliant

Data Bus Width :

4B

Time@Peak Reflow Temperature-Max (s) :

30

Interleaved Burst Length :

8

Number of Ports :

1

Access Time (Max) :

0.125 ns

Base Part Number :

MT41J256M4

Pbfree Code :

yes

I/O Type :

COMMON

Clock Frequency :

667MHz

Access Mode :

MULTI BANK PAGE BURST

Length :

11.5mm

Packaging :

Tray

Output Characteristics :

3-STATE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Position :

BOTTOM

Published :

2011

Mounting Type :

Surface Mount

Supply Voltage-Max (Vsup) :

1.575V

Operating Temperature :

0°C~95°C TC

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Min (Vsup) :

1.425V

Memory Interface :

Parallel

Voltage - Supply :

1.425V~1.575V

Organization :

256MX4

Address Bus Width :

17b

Supply Voltage :

1.5V

HTS Code :

8542.32.00.32

Package / Case :

78-TFBGA

Operating Supply Voltage :

1.5V

Memory Width :

4

Number of Pins :

78

Pin Count :

78

Memory Type :

Volatile

Number of Terminations :

78

Mount :

Surface Mount

Number of Functions :

1

Terminal Pitch :

0.8mm

Density :

1 Gb

Terminal Finish :

TIN SILVER COPPER