MT41J256M16RE-15E IT:D
- Mfr.Part #
- MT41J256M16RE-15E IT:D
- Manufacturer
- Micron Technology
- Package / Case
- 96-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 4GBIT PARALLEL 96FBGA
- Stock
- 31,580
- In Stock :
- 31,580
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Sequential Burst Length :
- 8
- Length :
- 14mm
- Access Time :
- 13.5ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-30 Code :
- R-PBGA-B96
- Additional Feature :
- AUTO/SELF REFRESH
- Refresh Cycles :
- 8192
- Power Supplies :
- 1.5V
- Base Part Number :
- MT41J256M4
- Height Seated (Max) :
- 1.2mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Memory Type :
- Volatile
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Pin Count :
- 96
- Supply Voltage-Min (Vsup) :
- 1.425V
- HTS Code :
- 8542.32.00.36
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Memory Format :
- DRAM
- Operating Temperature :
- -40°C~95°C TC
- Factory Lead Time :
- 16 Weeks
- Voltage - Supply :
- 1.425V~1.575V
- Terminal Position :
- BOTTOM
- Output Characteristics :
- 3-STATE
- Number of Functions :
- 1
- Qualification Status :
- Not Qualified
- Package / Case :
- 96-TFBGA
- Memory Width :
- 16
- I/O Type :
- COMMON
- Packaging :
- Bulk
- Memory Density :
- 4294967296 bit
- Interleaved Burst Length :
- 8
- Supply Voltage :
- 1.5V
- Operating Mode :
- SYNCHRONOUS
- Number of Terminations :
- 96
- Supply Current-Max :
- 0.285mA
- Memory Interface :
- Parallel
- Supply Voltage-Max (Vsup) :
- 1.575V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Memory Size :
- 4Gb 256M x 16
- Width :
- 10mm
- JESD-609 Code :
- e1
- Clock Frequency :
- 667MHz
- Number of Ports :
- 1
- Terminal Pitch :
- 0.8mm
- Standby Current-Max :
- 0.02A
- Organization :
- 256MX16
- Datasheets
- MT41J256M16RE-15E IT:D

Memory Micron Technology MT41J256M16RE-15E IT:D Overview
The Memory Micron Technology MT41J256M16RE-15E IT:D is a high-capacity, high-performance Integrated Circuit (IC) DRAM designed for applications requiring large-scale, fast-access memory solutions. Manufactured by Micron Technology, this IC features a 4Gbit density and is packaged in a compact 96FBGA format, making it ideal for advanced computing and high-speed processing environments. Its robust design and leading-edge technology ensure reliability and durability, crucial for enterprise-level applications and intensive data processing tasks. This product is perfectly suited to meet the needs of businesses looking to upgrade their memory infrastructure for enhanced system performance and increased operational efficiency.
MT41J256M16RE-15E IT:D Features
This DRAM IC boasts several key features that make it a standout choice for tech-intensive applications. With a parallel interface, it provides excellent data transfer rates, critical for systems requiring high-speed data processing. The 4Gbit capacity offers ample space for large datasets, while the 96FBGA package ensures a minimal footprint on system boards, essential for compact device designs. Additionally, its durability and reliability are assured under various operational conditions, highlighting its suitability for demanding applications.
MT41J256M16RE-15E IT:D Applications
- Enterprise Servers: Utilized for its high-speed data processing capabilities, enhancing server performance and reliability in managing vast amounts of data.
- Portable Computing Devices: Its compact 96FBGA packaging makes it ideal for integration in laptops and tablets, providing high-capacity memory without compromising on device size and portability.
- Networking Hardware: Plays a crucial role in networking infrastructures, such as routers and switches, by facilitating quick data exchange and improving bandwidth capacity.
- Gaming Consoles: Enhances gaming experiences by supporting high-speed memory requirements, allowing for advanced gaming graphics and smoother gameplay.
- Automotive Systems: Applied in advanced driver-assistance systems (ADAS) and other automotive technologies requiring robust memory solutions for real-time data processing.
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