MT29F4G08ABAEAH4-S:E

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Mfr.Part #
MT29F4G08ABAEAH4-S:E
Manufacturer
Micron Technology
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 4GBIT PARALLEL 63VFBGA
Stock
22,236
In Stock :
22,236

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Manufacturer :
Micron Technology
Product Category :
Memory
Voltage - Supply :
2.7V~3.6V
Min Operating Temperature :
0°C
Interface :
Parallel
Max Operating Temperature :
70°C
RoHS Status :
ROHS3 Compliant
Packaging :
Bulk
Number of Pins :
63
Base Part Number :
MT29F4G08
Operating Temperature :
0°C~70°C TA
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Size :
4Gb 512M x 8
Package / Case :
63-VFBGA
Operating Supply Voltage :
3.3V
Factory Lead Time :
9 Weeks
Mounting Type :
Surface Mount
Memory Type :
Non-Volatile
Supplier Device Package :
63-VFBGA (9x11)
Memory Format :
Flash
Memory Interface :
Parallel
Introducing Memory Micron Technology MT29F4G08ABAEAH4-S:E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:63, Base Part Number:MT29F4G08, Operating Temperature:0°C~70°C TA, Package / Case:63-VFBGA, Mounting Type:Surface Mount, MT29F4G08ABAEAH4-S:E pinout, MT29F4G08ABAEAH4-S:E datasheet PDF, MT29F4G08ABAEAH4-S:E amp .Beyond Memory Micron Technology MT29F4G08ABAEAH4-S:E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F4G08ABAEAH4-S:E


Memory Micron Technology MT29F4G08ABAEAH4-S:E Overview

Unveiling the Memory Micron Technology MT29F4G08ABAEAH4-S:E, a state-of-the-art IC FLASH memory device engineered by Micron Technology. This 4Gbit NAND flash memory offers a robust and high-capacity solution designed for applications that demand high-speed data storage and retrieval. Featuring a parallel interface and housed in a compact 63VFBGA package, this product is tailored for high-performance environments where space and power efficiency are critical. With its advanced technology, the Memory Micron Technology MT29F4G08ABAEAH4-S:E enhances system reliability and provides a scalable architecture ideal for a broad spectrum of industrial and commercial applications.

MT29F4G08ABAEAH4-S:E Features

The MT29F4G08ABAEAH4-S:E flash memory chip includes several key features that make it an exceptional choice for storage solutions. It supports fast read and write speeds essential for high throughput applications. The memory is also equipped with error correction code (ECC) functionality to ensure data integrity and reliability. Its 63-ball VFBGA package ensures a reduced footprint on the PCB, facilitating more compact designs.

MT29F4G08ABAEAH4-S:E Applications

  • Embedded Systems: This NAND flash is ideal for use in embedded systems where long-term reliability and high-density data storage are required. Its fast access times and high endurance make it suitable for real-time applications.
  • Consumer Electronics: In devices such as smartphones, tablets, and digital cameras, the MT29F4G08ABAEAH4-S:E provides the necessary storage capacity and speed for media storage and playback, enhancing device performance and user experience.
  • Automotive Applications: Suitable for automotive infotainment systems and advanced driver assistance systems (ADAS) where durability and data integrity are paramount. This memory can handle the rigorous demands of automotive environments.
  • Industrial Automation: In industrial settings, this memory chip supports applications requiring high-speed data logging and processing, contributing to more efficient and reliable automation processes.
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