MT29F2G16ABBEAH4:E TR

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Mfr.Part #
MT29F2G16ABBEAH4:E TR
Manufacturer
Micron Technology
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 2GBIT PARALLEL 63VFBGA
Stock
29,749
In Stock :
29,749

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Manufacturer :
Micron Technology
Product Category :
Memory
Number of Terminations :
63
JESD-609 Code :
e1
Voltage - Supply :
1.7V~1.95V
Supply Voltage-Min (Vsup) :
1.7V
Memory Interface :
Parallel
Terminal Position :
BOTTOM
Page Size :
1Kwords
Published :
2013
Supply Voltage :
1.8V
Packaging :
Digi-Reel®
Standby Current-Max :
0.00005A
Organization :
128MX16
Factory Lead Time :
3 Weeks
Memory Size :
2Gb 128M x 16
Memory Density :
2147483648 bit
RoHS Status :
ROHS3 Compliant
Memory Width :
16
Memory Type :
Non-Volatile
Supply Current-Max :
0.02mA
Length :
11mm
Mounting Type :
Surface Mount
Sector Size :
64K
Programming Voltage :
1.8V
Number of Functions :
1
Command User Interface :
yes
Memory Format :
Flash
Access Time (Max) :
25 ns
Height Seated (Max) :
1mm
Operating Temperature :
0°C~70°C TA
Ready/Busy :
yes
Qualification Status :
Not Qualified
Package / Case :
63-VFBGA
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Operating Mode :
ASYNCHRONOUS
Data Polling :
No
Width :
9mm
Toggle Bit :
No
Pin Count :
63
Number of Sectors/Size :
2k
Supply Voltage-Max (Vsup) :
1.95V
Terminal Pitch :
0.8mm
Power Supplies :
1.8V
JESD-30 Code :
R-PBGA-B63
Base Part Number :
MT29F2G16
Terminal Finish :
TIN SILVER COPPER
Introducing Memory Micron Technology MT29F2G16ABBEAH4:E TR from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:63, Mounting Type:Surface Mount, Operating Temperature:0°C~70°C TA, Package / Case:63-VFBGA, Base Part Number:MT29F2G16, MT29F2G16ABBEAH4:E TR pinout, MT29F2G16ABBEAH4:E TR datasheet PDF, MT29F2G16ABBEAH4:E TR amp .Beyond Memory Micron Technology MT29F2G16ABBEAH4:E TR ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F2G16ABBEAH4:E TR


Memory Micron Technology MT29F2G16ABBEAH4:E TR Overview

The Memory Micron Technology MT29F2G16ABBEAH4:E TR is a cutting-edge integrated circuit designed by Micron Technology, one of the leading innovators in the semiconductor industry. This 2Gbit NAND Flash memory chip, housed in a compact 63VFBGA package, offers high-density, non-volatile storage solutions. It is ideal for applications requiring large volumes of data storage with space constraints and high reliability. The parallel interface ensures quick data access and high throughput, making it a premier choice for advanced electronic systems.

MT29F2G16ABBEAH4:E TR Features

This integrated circuit features a robust design optimized for high-speed and efficient performance. The parallel interface facilitates faster data transfer rates compared to serial interfaces, which is critical for performance-demanding applications. Its 2GBit capacity provides ample storage for both firmware and application data, while the 63VFBGA packaging allows for a smaller footprint on the printed circuit board (PCB), optimizing space without compromising performance.

MT29F2G16ABBEAH4:E TR Applications

  • Smartphones and Tablets: Utilized for storing the operating system and user data, ensuring quick boot times and efficient access to essential applications.
  • Digital Cameras: Employs high-capacity storage necessary for high-resolution images and video recording, enabling extended use without frequent memory offloads.
  • Portable Media Players: Used to store large libraries of music, videos, and other media, providing fast access and a seamless playback experience.
  • Automotive Applications: Integrated into infotainment and navigation systems to store maps and media, enhancing the user experience with reliable and responsive performance.
  • Industrial Automation: Applied in complex control systems requiring robust data logging and real-time processing capabilities.
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Shipping Cost

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