MT29F2G08ABBEAH4:E TR
- Mfr.Part #
- MT29F2G08ABBEAH4:E TR
- Manufacturer
- Micron Technology
- Package / Case
- 63-VFBGA
- Datasheet
- Download
- Description
- IC FLASH 2GBIT PARALLEL 63VFBGA
- Stock
- 42,876
- In Stock :
- 42,876
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- Manufacturer :
- Micron Technology
- Product Category :
- Memory
- Supply Voltage-Min (Vsup) :
- 1.7V
- Memory Interface :
- Parallel
- Height Seated (Max) :
- 1mm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 3 Weeks
- Terminal Position :
- BOTTOM
- Programming Voltage :
- 1.8V
- Voltage - Supply :
- 1.7V~1.95V
- Terminal Finish :
- TIN SILVER COPPER
- Width :
- 9mm
- Organization :
- 256MX8
- JESD-609 Code :
- e1
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 1.8V
- Number of Functions :
- 1
- Base Part Number :
- MT29F2G08
- Memory Density :
- 2147483648 bit
- ECCN Code :
- 3A991.B.1.A
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8542.32.00.51
- Terminal Pitch :
- 0.8mm
- Memory Type :
- Non-Volatile
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 63
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- JESD-30 Code :
- R-PBGA-B63
- Operating Mode :
- ASYNCHRONOUS
- Memory Format :
- Flash
- Package / Case :
- 63-VFBGA
- Memory Size :
- 2Gb 256M x 8
- Memory Width :
- 8
- Supply Voltage-Max (Vsup) :
- 1.95V
- Operating Temperature :
- 0°C~70°C TA
- Length :
- 11mm
- Datasheets
- MT29F2G08ABBEAH4:E TR

Memory Micron Technology MT29F2G08ABBEAH4:E TR Overview
The Memory Micron Technology MT29F2G08ABBEAH4:E TR is a cutting-edge integrated circuit designed for high-performance applications requiring robust data storage solutions. This 2Gbit flash memory device, encapsulated in a compact 63VFBGA package, delivers efficient parallel interface capabilities ideal for applications that demand fast access and reliable data retention. Tailored for businesses seeking scalable and flexible memory solutions, this product is an essential component in various high-tech assemblies, making it a strategic choice for manufacturers looking to enhance system capabilities while maintaining cost-efficiency and dependability.
MT29F2G08ABBEAH4:E TR Features
The MT29F2G08ABBEAH4:E TR flash memory from Micron Technology incorporates several key features that set it apart. It offers a substantial 2Gbit storage capacity, providing ample space for large-scale data handling. The parallel interface ensures high-speed data transmission, essential for applications requiring rapid access to large amounts of data. The device's 63VFBGA packaging is not only space-efficient but also offers enhanced thermal performance and reduced power consumption, crucial for maintaining the integrity and longevity of the memory.
MT29F2G08ABBEAH4:E TR Applications
- Consumer Electronics: Utilized in smartphones, tablets, and other personal devices, this IC provides the necessary storage capacity for operating systems, applications, and user data, ensuring smooth and efficient device operation.
- Automotive Systems: In automotive applications, the MT29F2G08ABBEAH4:E TR supports dashboard functionality, infotainment systems, and advanced driver assistance systems (ADAS), storing critical firmware and data needed for vehicle operation and safety.
- Industrial Automation: This memory is integral to the operation of PLCs and other control systems, offering the reliability and speed required for managing complex processes and real-time decision making in manufacturing environments.
- Networking Equipment: Suitable for use in routers, switches, and other networking hardware where high data throughput and error-free storage are paramount for system reliability and performance.
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