MT29F2G08ABAEAH4-AATX:E

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Mfr.Part #
MT29F2G08ABAEAH4-AATX:E
Manufacturer
Micron Technology
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 2GBIT PARALLEL 63VFBGA
Stock
19,854
In Stock :
19,854

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Manufacturer :
Micron Technology
Product Category :
Memory
Memory Format :
Flash
Contact Plating :
Copper, Silver, Tin
Mount :
Surface Mount
Voltage - Supply :
2.7V~3.6V
Memory Interface :
Parallel
RoHS Status :
RoHS Compliant
Organization :
256MX8
Supply Voltage-Max (Vsup) :
3.6V
Memory Size :
2Gb 256M x 8
Memory Width :
8
Number of Functions :
1
Supply Voltage-Min (Vsup) :
2.7V
Packaging :
Tray
Memory Type :
Non-Volatile
Factory Lead Time :
5 Weeks
Number of Terminations :
63
Width :
9mm
Supply Voltage :
3.3V
Page Size :
2kB
Number of Pins :
63
Package / Case :
63-VFBGA
Operating Temperature :
-40°C~105°C TA
Mounting Type :
Surface Mount
Operating Supply Voltage :
3.3V
Operating Mode :
ASYNCHRONOUS
Terminal Pitch :
0.8mm
Terminal Position :
BOTTOM
Height Seated (Max) :
1mm
Density :
2 GB
Length :
11mm
Introducing Memory Micron Technology MT29F2G08ABAEAH4-AATX:E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:63, Number of Pins:63, Package / Case:63-VFBGA, Operating Temperature:-40°C~105°C TA, Mounting Type:Surface Mount, MT29F2G08ABAEAH4-AATX:E pinout, MT29F2G08ABAEAH4-AATX:E datasheet PDF, MT29F2G08ABAEAH4-AATX:E amp .Beyond Memory Micron Technology MT29F2G08ABAEAH4-AATX:E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F2G08ABAEAH4-AATX:E


Memory Micron Technology MT29F2G08ABAEAH4-AATX:E Overview

The Memory Micron Technology MT29F2G08ABAEAH4-AATX:E is a high-capacity 2Gbit NAND flash memory component, delivering robust performance in a compact 63VFBGA package. Designed by Micron Technology, a leader in advanced memory solutions, this IC flash offers enhanced durability and high-speed data processing capabilities for demanding applications. Its parallel interface ensures fast read and write operations, crucial for applications requiring quick access to large volumes of data. This memory device is engineered to meet the stringent requirements of industrial, automotive, and consumer electronics markets, making it an ideal choice for manufacturers looking to integrate reliable storage solutions into their products.

MT29F2G08ABAEAH4-AATX:E Features

This integrated circuit features a 2Gbit storage capacity with a parallel interface for high-speed data transfer. It is packaged in a 63VFBGA form factor that minimizes space on the circuit board, making it suitable for compact devices. The NAND architecture of the IC provides efficient write endurance, program and erase cycles, and high-density storage capability, all of which contribute to its longevity and reliability in a variety of use cases.

MT29F2G08ABAEAH4-AATX:E Applications

  • Digital Cameras: Utilizes the high storage capacity for image and video file storage, enabling extended shooting sessions without the need for frequent data transfers.
  • Portable Media Players: Employs the NAND flash for storing large multimedia files, allowing for quick access and reliable playback of video and audio content.
  • Automotive Infotainment Systems: The robust data handling capabilities of the IC support complex automotive applications, such as mapping and media storage, enhancing the in-vehicle user experience.
  • Mobile Devices: Facilitates efficient storage of apps, photos, and videos, contributing to the overall performance and speed of smartphones and tablets.
  • Embedded Systems: Provides dependable, quick-access storage for critical data in industrial and commercial embedded applications.
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Shipping Cost

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