MT29F1T208ECHBBJ4-3RES:B TR

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Mfr.Part #
MT29F1T208ECHBBJ4-3RES:B TR
Manufacturer
Micron Technology
Package / Case
132-VBGA
Datasheet
Download
Description
IC FLASH 1.125T PARALLEL 132VBGA
Stock
17,861
In Stock :
17,861

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Manufacturer :
Micron Technology
Product Category :
Memory
RoHS Status :
ROHS3 Compliant
Clock Frequency :
333MHz
Voltage - Supply :
2.5V~3.6V
Memory Format :
Flash
Memory Type :
Non-Volatile
Operating Temperature :
0°C~70°C TA
Mounting Type :
Surface Mount
Factory Lead Time :
12 Weeks
Memory Size :
1.125Tb 144G x 8
Packaging :
Tape and Reel (TR)
Package / Case :
132-VBGA
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Interface :
Parallel
Introducing Memory Micron Technology MT29F1T208ECHBBJ4-3RES:B TR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:0°C~70°C TA, Mounting Type:Surface Mount, Package / Case:132-VBGA, MT29F1T208ECHBBJ4-3RES:B TR pinout, MT29F1T208ECHBBJ4-3RES:B TR datasheet PDF, MT29F1T208ECHBBJ4-3RES:B TR amp .Beyond Memory Micron Technology MT29F1T208ECHBBJ4-3RES:B TR ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F1T208ECHBBJ4-3RES:B TR


Memory Micron Technology MT29F1T208ECHBBJ4-3RES:B TR Overview

The Memory Micron Technology MT29F1T208ECHBBJ4-3RES:B TR is a high-capacity, high-performance integrated circuit flash memory device designed for a wide array of applications. Manufactured by Micron Technology, one of the leading providers in memory and storage solutions, this IC features a massive 1.125 terabits of parallel flash memory housed in a compact 132VBGA package. Its robust design and advanced technology ensure optimal reliability and speed, making it an ideal solution for demanding B2B applications requiring extensive data storage and rapid access times. The product's versatility in various high-tech environments underscores its appeal to bulk purchasers aiming to leverage cutting-edge memory technology for enhanced system performance.

MT29F1T208ECHBBJ4-3RES:B TR Features

This advanced memory component boasts a parallel interface, ensuring high-speed data transfer rates that are essential for performance-critical applications. The 132VBGA package is not only space-efficient but also offers enhanced thermal management, which is crucial for maintaining the integrity and longevity of the device. With its vast storage capacity, the MT29F1T208ECHBBJ4-3RES:B TR stands out as a superior choice for developers looking to maximize their hardware's memory capabilities.

MT29F1T208ECHBBJ4-3RES:B TR Applications

  • Data Centers: Utilized for storing extensive databases and handling large-scale data processing, facilitating rapid access and reliable data retrieval.
  • Enterprise Servers: Empowers enterprise-grade servers with high-density storage and swift data access to handle critical business applications and large volumes of user data.
  • Telecommunication Infrastructure: Ideal for use in telecommunications equipment where large amounts of data need to be buffered, enhancing bandwidth and reducing latency.
  • High-performance Computing: Serves high-performance computing (HPC) systems requiring quick access to large datasets, improving computational efficiency and speed.
  • Automotive Electronics: Supports advanced automotive systems such as infotainment and advanced driver-assistance systems (ADAS), which require robust, high-speed memory solutions.
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Shipping Method

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Shipping Cost

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