MT29F1T08EEHAFJ4-3ITF:A

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Mfr.Part #
MT29F1T08EEHAFJ4-3ITF:A
Manufacturer
Micron Technology
Package / Case
Datasheet
Download
Description
TLC 1T 128GX8 VBGA DDP
Stock
12,321
In Stock :
12,321

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Manufacturer :
Micron Technology
Product Category :
Memory
Factory Lead Time :
7 Weeks
Packaging :
Bulk
Introducing Memory Micron Technology MT29F1T08EEHAFJ4-3ITF:A from Chip IC,where excellence meets affordability. This product stands out with its MT29F1T08EEHAFJ4-3ITF:A pinout, MT29F1T08EEHAFJ4-3ITF:A datasheet PDF, MT29F1T08EEHAFJ4-3ITF:A amp .Beyond Memory Micron Technology MT29F1T08EEHAFJ4-3ITF:A ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F1T08EEHAFJ4-3ITF:A


Memory Micron Technology MT29F1T08EEHAFJ4-3ITF:A Overview

The Memory Micron Technology MT29F1T08EEHAFJ4-3ITF:A represents a pinnacle of technological innovation in triple-level cell (TLC) NAND flash memory. Designed by Micron Technology, this product features a vast storage capacity of 1 terabit (128GB) in an efficient VBGA (very fine ball grid array) package. It's specifically engineered for high-density, high-throughput applications, making it ideal for enterprises seeking reliable, scalable solutions. Its dual-die package (DDP) design enhances performance and reliability, which are crucial for advanced computing environments. With its robust design and advanced manufacturing techniques, the Memory Micron Technology MT29F1T08EEHAFJ4-3ITF:A offers an exceptional blend of density, performance, and durability, making it a top choice for businesses looking to leverage the power of cutting-edge memory technology.

MT29F1T08EEHAFJ4-3ITF:A Features

This NAND flash memory module boasts several key features that stand out in the memory technology landscape:

  • High Capacity: Offers a significant 1 terabit (128GB) storage capability, enabling extensive data storage in compact devices.
  • TLC Technology: Utilizes triple-level cell technology that allows storing three bits of data per cell, optimizing storage density and cost-effectiveness.
  • VBGA Packaging: The very fine ball grid array package ensures a minimal footprint on the PCB while providing robust connectivity and enhanced durability.
  • Dual-Die Configuration: Incorporates a dual-die package to double the interface width for faster data access and improved performance.

MT29F1T08EEHAFJ4-3ITF:A Applications

  • Smartphones: Utilized in mobile devices for storage of applications, photos, videos, and other data, enabling enhanced memory capacity without compromising device size or battery life.
  • Tablets: Provides high-capacity memory for tablets, enhancing their ability to handle multitasking and storage-intensive applications such as HD video playback and graphic-intensive games.
  • Wearable Technology: Ideal for use in wearable devices where space is at a premium, offering substantial storage in a small form factor, facilitating advanced features like app storage, music playback, and data collection.
  • Automotive Systems: Supports advanced automotive applications such as infotainment systems and autonomous driving technologies, where reliability and density are crucial.
  • Industrial Applications: Serves robust industrial environments requiring durable, high-capacity memory solutions for data logging, automation processes, and complex operational commands.
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