MT29F1G08ABAEAH4-AITX:E

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Mfr.Part #
MT29F1G08ABAEAH4-AITX:E
Manufacturer
Micron Technology
Package / Case
63-VFBGA
Datasheet
Download
Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Stock
21,393
In Stock :
21,393

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Manufacturer :
Micron Technology
Product Category :
Memory
Supply Voltage :
3.3V
Height Seated (Max) :
1mm
Memory Interface :
Parallel
Voltage - Supply :
2.7V~3.6V
Supply Voltage-Min (Vsup) :
2.7V
Published :
2008
JESD-30 Code :
R-PBGA-B63
Memory Type :
Non-Volatile
Memory Width :
8
Surface Mount :
yes
Memory Density :
1073741824 bit
Operating Temperature :
-40°C~85°C TA
Factory Lead Time :
4 Weeks
Length :
11mm
Operating Mode :
ASYNCHRONOUS
Number of Functions :
1
Organization :
128MX8
Package / Case :
63-VFBGA
RoHS Status :
RoHS Compliant
Memory Size :
1Gb 128M x 8
Number of Terminations :
63
Memory Format :
Flash
Width :
9mm
Terminal Pitch :
0.8mm
Terminal Position :
BOTTOM
Packaging :
Tray
Mounting Type :
Surface Mount
Supply Voltage-Max (Vsup) :
3.6V
Programming Voltage :
2.7V
Introducing Memory Micron Technology MT29F1G08ABAEAH4-AITX:E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~85°C TA, Package / Case:63-VFBGA, Number of Terminations:63, Mounting Type:Surface Mount, MT29F1G08ABAEAH4-AITX:E pinout, MT29F1G08ABAEAH4-AITX:E datasheet PDF, MT29F1G08ABAEAH4-AITX:E amp .Beyond Memory Micron Technology MT29F1G08ABAEAH4-AITX:E ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Micron Technology MT29F1G08ABAEAH4-AITX:E


Memory Micron Technology MT29F1G08ABAEAH4-AITX:E Overview

The Memory Micron Technology MT29F1G08ABAEAH4-AITX:E represents a cutting-edge NAND flash memory solution, engineered by Micron Technology, one of the leaders in memory and storage innovations. This IC FLASH 1GBIT device encapsulates high-density data storage capability within a compact 63VFBGA package. Designed to offer robust performance, enhanced durability, and exceptional reliability, it is tailored for applications demanding high storage solutions with a minimal footprint. The integration of advanced technology allows for improved write performance and decreased power consumption, making it an excellent choice for high-performance industrial applications.

MT29F1G08ABAEAH4-AITX:E Features

The MT29F1G08ABAEAH4-AITX:E Flash Memory from Micron Technology incorporates several key features that make it an exceptional choice for a variety of demanding applications. These include a large 1Gbit storage capacity, high-speed parallel interface for swift data access and transfer, and a compact 63VFBGA package that ensures a reduced board space requirement. Additionally, it offers high endurance and reliability under a broad range of temperature variations, which is crucial for rigorous industrial environments.

MT29F1G08ABAEAH4-AITX:E Applications

  • Embedded Systems: Utilized in complex embedded systems, the MT29F1G08ABAEAH4-AITX:E provides the necessary robustness and high-capacity memory storage to manage intensive data processing and storage requirements.
  • Mobile Devices: Supports high storage capacity needs for mobile devices, allowing for enhanced multimedia storage, faster application performance, and improved user experience.
  • Automotive Applications: Ideal for use in automotive environments, where durability and reliability are critical. The memory component can handle advanced driver-assistance systems (ADAS) data storage and in-car entertainment systems.
  • Internet of Things (IoT) Devices: Serves as a core component in IoT devices, where efficient data management and storage are needed to process and store information from various sensors and communicators.
  • Industrial Automation: In industrial automation systems, this memory chip plays a crucial role in logging extensive data and supporting complex machine-to-machine communications.
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