MSB1218A-RT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100μA

Packaging :

Tape and Reel (TR)

Number of Elements :

1

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

45V

Collector Emitter Breakdown Voltage :

45V

Transistor Type :

PNP

Terminal Position :

Dual

Published :

1997

hFE Min :

210

Current Rating :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Power Dissipation :

150mW

Radiation Hardening :

No

Max Collector Current :

100mA

Collector Emitter Saturation Voltage :

500mV

Pin Count :

3

Number of Terminations :

3

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

7V

Voltage - Rated DC :

-45V

Max Power Dissipation :

150mW

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

45V

Factory Lead Time :

2 Weeks

Surface Mount :

yes

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Package / Case :

SC-70, SOT-323