MSB1218A-RT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Transition Frequency :

100MHz

Current - Collector Cutoff (Max) :

100μA

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Pin Count :

3

Polarity/Channel Type :

PNP

Collector Emitter Saturation Voltage :

500mV

Current Rating :

-100mA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Transistor Application :

AMPLIFIER

Power Dissipation :

150mW

Element Configuration :

Single

Collector Base Voltage (VCBO) :

45V

Collector Emitter Voltage (VCEO) :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Surface Mount :

yes

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

7V

Factory Lead Time :

2 Weeks

Packaging :

Tape and Reel (TR)

Package / Case :

SC-70, SOT-323

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Voltage - Rated DC :

-45V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

45V

Number of Terminations :

3

Max Power Dissipation :

150mW

Published :

1997

hFE Min :

210

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Position :

Dual

Number of Elements :

1