MRF9030NR1
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- Mfr.Part #
- MRF9030NR1
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-270AA
- Datasheet
- Download
- Description
- FET RF 65V 945MHZ TO270-2
- Stock
- 41,818
- In Stock ：
- 41,818
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Voltage - Test :
- 26V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Transistor Type :
- LDMOS
- Power - Output :
- 30W
- Frequency :
- 945MHz
- Voltage - Rated :
- 65V
- Terminal Finish :
- Matte Tin (Sn)
- Current - Test :
- 250mA
- Published :
- 2008
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- MRF9030
- JESD-609 Code :
- e3
- RoHS Status :
- Non-RoHS Compliant
- Gain :
- 20dB
- Package / Case :
- TO-270AA
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MRF9030NR1
MRF9030NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF9030NR1 Description
The MRF9030NR1 is a high-frequency RF power transistor with a frequency range of 1-1000 MHz and an output power of 30W. It offers high gain and efficiency, making it ideal for use in applications such as FM radio broadcast transmitters, industrial heating, and plasma generators. The transistor has excellent ruggedness and thermal stability, ensuring reliable and consistent performance in harsh environments. Its compact size and ease of use make it an excellent choice for high-frequency power amplifier design.
MRF9030NR1 Features
Frequency range: 1-1000 MHz
Output power: 30W
High gain and efficiency
Excellent ruggedness and thermal stability
MRF9030NR1 Applications
FM radio broadcast transmitters
Industrial heating
Plasma generators
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