MRF7S19120NR1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Voltage - Test :

28V

Operating Temperature (Max) :

225°C

Frequency :

1.99GHz

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDFM-F4

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

SOURCE

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Terminal Form :

Flat

Number of Elements :

1

Configuration :

Single

Gain :

18dB

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

65V

Terminal Position :

Dual

Published :

2011

Transistor Type :

LDMOS

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Power - Output :

36W

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.75

Polarity/Channel Type :

N-Channel

Package / Case :

TO-270AB

Number of Terminations :

4

Voltage - Rated :

65V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Current - Test :

1.2A

FET Technology :

METAL-OXIDE SEMICONDUCTOR