MRF173

Manufacturer :

MACOM Technology Solutions

Product Category :

Transistors - FETs, MOSFETs - RF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Frequency :

200 MHz

Power Dissipation-Max (Abs) :

220 W

Operating Temp Range :

-65C to 200C

Voltage - Test :

28 V

Transistor Element Material :

SILICON

Max Operating Temperature :

150 °C

RoHS :

Compliant

Current Rating (Amps) :

9A

Pbfree Code :

yes

Product Category :

RF MOSFET Transistors

Qualification Status :

Not Qualified

Current Rating :

9 A

Package :

Tray

Drain to Source Voltage (Vdss) :

65 V

Mounting :

Screw

Pin Count :

4

Power - Output :

80W

Element Configuration :

Single

Drain Efficiency (Typ) :

60(%)

Current - Test :

50 mA

Power Dissipation (Max) :

220000(mW)

Max Power Dissipation :

220 W

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Transistor Type :

N-Channel

Continuous Drain Current :

9(A)

Package / Case :

221-11-3

Terminal Position :

Radial

Package Type :

CASE 211-11

Lead Free :

Lead Free

Package Shape :

Round

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Rad Hardened :

No

Gate to Source Voltage (Vgs) :

40 V

Radiation Hardening :

No

Type :

RF Power MOSFET

Number of Terminals :

4

Drain Source Voltage (Max) :

65(V)

Continuous Drain Current (ID) :

9 A

Minimum Operating Temperature :

- 65 C

Frequency (Max) :

200(MHz)

Operating Frequency :

200 MHz

Output Power :

80 W

Surface Mount :

No

Voltage Rating :

65 V

Product Type :

RF MOSFET Transistors

Brand :

MACOM

ECCN Code :

EAR99

Screening Level :

Military

Series :

-

Reach Compliance Code :

Compliant

Subcategory :

MOSFETs

Channel Type :

N

Manufacturer :

MACOM

Frequency :

150 MHz

Noise Figure :

1.5 dB

Mount :

Screw

Configuration :

Single

Transistor Application :

AMPLIFIER

Supplier Device Package :

211-11, Style 2

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

SMD/SMT

Number of Pins :

4

Product Status :

Active

Min Operating Temperature :

-65 °C

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated :

65 V

Technology :

Si

DS Breakdown Voltage-Min :

65 V

Power Gain (Typ)@Vds :

13(dB)

Drain Current-Max (Abs) (ID) :

9 A

Packaging :

Tray

Gain :

13 dB

Input Capacitance (Typ)@Vds :

110@28V(pF)

Test Current :

50 mA

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Terminal Form :

Flat

Output Power (Max) :

80

JESD-30 Code :

O-CRFM-F4

Test Voltage :

28 V

Drain to Source Breakdown Voltage :

65 V