MRF1535FNT1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Gain :

13.5dB

Base Part Number :

MRF1535

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2001

JESD-30 Code :

R-PDFM-F6

Case Connection :

SOURCE

Current - Test :

500mA

Package / Case :

TO-272BA

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Flat

Factory Lead Time :

10 Weeks

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Number of Terminations :

6

Number of Elements :

1

Power Dissipation-Max (Abs) :

135W

Operating Temperature (Max) :

200°C

Transistor Type :

LDMOS

Frequency :

520MHz

Voltage - Test :

12.5V

DS Breakdown Voltage-Min :

40V

Current Rating (Amps) :

6A

Drain Current-Max (Abs) (ID) :

6A

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Power - Output :

35W

Voltage - Rated :

40V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Surface Mount :

yes