MRF1517NT1

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PQSO-N4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

62.5W

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

25V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2002

Voltage - Test :

7.5V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Power - Output :

8W

HTS Code :

8541.29.00.75

Number of Elements :

1

Current - Test :

150mA

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Gain :

14dB

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Configuration :

Single

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated :

25V

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Base Part Number :

MRF1517

Package / Case :

PLD-1.5

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Reach Compliance Code :

not_compliant

Terminal Position :

QUAD

Current Rating (Amps) :

4A

Frequency :

520MHz