MRF1511NT1
- Mfr.Part #
- MRF1511NT1
- Manufacturer
- NXP Semiconductors
- Package / Case
- PLD-1.5
- Datasheet
- Download
- Description
- FET RF 40V 175MHZ PLD-1.5
- Stock
- 16,180
- In Stock :
- 16,180
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Terminal Finish :
- Matte Tin (Sn)
- Number of Terminations :
- 4
- Operating Temperature (Max) :
- 150°C
- Drain Current-Max (Abs) (ID) :
- 4A
- Published :
- 2009
- Configuration :
- Single
- Transistor Type :
- LDMOS
- Factory Lead Time :
- 10 Weeks
- Case Connection :
- SOURCE
- Polarity/Channel Type :
- N-Channel
- Frequency :
- 175MHz
- Qualification Status :
- Not Qualified
- Package / Case :
- PLD-1.5
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PQSO-N4
- Power - Output :
- 8W
- Current Rating (Amps) :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max (Abs) :
- 62.5W
- JESD-609 Code :
- e3
- Base Part Number :
- MRF1511
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Test :
- 150mA
- Number of Elements :
- 1
- Gain :
- 13dB
- Voltage - Test :
- 7.5V
- Surface Mount :
- yes
- Terminal Form :
- NO LEAD
- HTS Code :
- 8541.29.00.75
- Terminal Position :
- QUAD
- DS Breakdown Voltage-Min :
- 40V
- Datasheets
- MRF1511NT1
MRF1511NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF1511NT1 Description
MRF1511NT1 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF1511NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1511NT1 has the common source configuration.
MRF1511NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF1511NT1 Applications
ISM applications
DC large signal applications
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