MRF1511NT1
- Mfr.Part #
- MRF1511NT1
- Manufacturer
- Freescale Semiconductor
- Package / Case
- PLD-1.5
- Datasheet
- Download
- Description
- RF VERY HIGH FREQUENCY BAND, N-C
- Stock
- 16,180
- In Stock :
- 16,180
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- Manufacturer :
- Freescale Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PQSO-N4
- DS Breakdown Voltage-Min :
- 40V
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 4
- HTS Code :
- 8541.29.00.75
- Voltage - Test :
- 7.5V
- Surface Mount :
- yes
- Number of Elements :
- 1
- Configuration :
- Single
- Frequency :
- 175MHz
- Drain Current-Max (Abs) (ID) :
- 4A
- Terminal Position :
- QUAD
- Case Connection :
- SOURCE
- Base Part Number :
- MRF1511
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Gain :
- 13dB
- Terminal Form :
- NO LEAD
- Voltage - Rated :
- 40V
- ECCN Code :
- EAR99
- Current - Test :
- 150mA
- Published :
- 2009
- Current Rating (Amps) :
- 4A
- Operating Temperature (Max) :
- 150°C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Transistor Type :
- LDMOS
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation-Max (Abs) :
- 62.5W
- Power - Output :
- 8W
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 10 Weeks
- Package / Case :
- PLD-1.5
- Datasheets
- MRF1511NT1
MRF1511NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
MRF1511NT1 Description
MRF1511NT1 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF1511NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1511NT1 has the common source configuration.
MRF1511NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
MRF1511NT1 Applications
ISM applications
DC large signal applications
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