MRF101AN
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- Mfr.Part #
- MRF101AN
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- RF TRANSISTOR 100W TO-220
- Stock
- 5,454
- In Stock ：
- 5,454
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Gain :
- 21.1dB
- Transistor Type :
- LDMOS
- Power - Output :
- 115W
- Voltage - Test :
- 50V
- Current - Test :
- 100mA
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 1.8MHz~250MHz
- Current Rating (Amps) :
- 10μA
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated :
- 133V
- Datasheets
- MRF101AN
MRF101AN datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
Description
The MRF101AN is an RF Power LDMOS Transistor, High Ruggedness N-Channel, Enhancement-Mode Lateral MOSFETs. These gadgets are made for HF and VHF communications, as well as industrial, scientific, and medical (ISM), broadcast, and aerospace applications. The equipment is very durable and performs well up to 250 MHz.
Features
-
Integrated ESD protection with greater negative gate-source
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Voltage range for improved Class C operation
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Included in NXP product longevity program with assured
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Supply for a minimum of 15 years after launch
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Mirror pinout versions (A and B) to simplify use in a push-pull,
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Two-up configuration
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Characterized from 30 to 50 V
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Suitable for linear application
Applications
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Radio and VHF TV broadcast
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HF and VHF communications
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Switch mode power supplies
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Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– MRI and other medical applications
– Industrial heating, welding and drying systems
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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