MR0A16AYS35R

Manufacturer :

NXP Semiconductors

Product Category :

Memory

Supply Voltage-Min (Vsup) :

3V

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin (Sn)

Memory Type :

Non-Volatile

Mounting Type :

Surface Mount

Memory Interface :

Parallel

JESD-609 Code :

e3

Terminal Pitch :

0.8mm

Supply Voltage-Max (Vsup) :

3.6V

Memory Size :

1Mb 64K x 16

RoHS Status :

ROHS3 Compliant

Write Cycle Time - Word, Page :

35ns

Packaging :

Tape and Reel (TR)

Access Time (Max) :

35 ns

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Memory Format :

RAM

Voltage - Supply :

3V~3.6V

Data Bus Width :

16b

Number of Terminations :

44

ECCN Code :

EAR99

Organization :

64KX16

Memory Width :

16

Word Size :

16b

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Pin Count :

44

Supply Voltage :

3.3V

Pbfree Code :

yes

Length :

18.41mm

Operating Temperature :

0°C~70°C TA

HTS Code :

8542.32.00.71

Published :

2012

Height Seated (Max) :

1.2mm

Operating Mode :

ASYNCHRONOUS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Density :

1 Mb

Number of Pins :

44

Number of Functions :

1

Operating Supply Voltage :

3.3V

Qualification Status :

Not Qualified

Terminal Position :

Dual

Nominal Supply Current :

155mA

Time@Peak Reflow Temperature-Max (s) :

40

Standby Current-Max :

0.028A