MNS2N3501UBP
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- Mfr.Part #
- MNS2N3501UBP
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A UB
- Stock
- 33,490
- In Stock ：
- 33,490
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Microchip
- Package / Case :
- 3-SMD, No Lead
- Series :
- Military, MIL-PRF-19500/366
- Current - Collector (Ic) (Max) :
- 300 mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Brand :
- Microchip Technology
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Product Status :
- Active
- Supplier Device Package :
- UB
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package :
- Bulk
- Power - Max :
- 500 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Frequency - Transition :
- -
- Subcategory :
- Transistors
- Product Category :
- Bipolar Transistors - BJT
- Mounting Type :
- Surface Mount
- Datasheets
- MNS2N3501UBP
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) 3-SMD, No Lead Surface Mount
MNS2N3501UBP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 150 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MNS2N3501UBP Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of UB
MNS2N3501UBP Applications
There are a lot of Microchip Technology
MNS2N3501UBP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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