MNS2N3501P
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- Mfr.Part #
- MNS2N3501P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A TO39
- Stock
- 23,116
- In Stock ：
- 23,116
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Product Category :
- Bipolar Transistors - BJT
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Frequency - Transition :
- -
- Subcategory :
- Transistors
- Product Status :
- Active
- Series :
- Military, MIL-PRF-19500/366
- Brand :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector (Ic) (Max) :
- 300 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Package :
- Bulk
- Supplier Device Package :
- TO-39 (TO-205AD)
- Transistor Type :
- NPN
- Power - Max :
- 1 W
- Mounting Type :
- Through Hole
- Manufacturer :
- Microchip
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Datasheets
- MNS2N3501P
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AD, TO-39-3 Metal Can Through Hole
MNS2N3501P Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.This product comes in a TO-39 (TO-205AD) device package from the supplier.Device displays Collector Emitter Breakdown (150 V maximal voltage).
MNS2N3501P Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-39 (TO-205AD)
MNS2N3501P Applications
There are a lot of Microchip Technology
MNS2N3501P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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