MMBD770T1G

Manufacturer :

onsemi

Product Category :

Diodes - RF

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

Max Forward Surge Current (Ifsm) :

1A

Terminal Finish :

Tin (Sn)

Capacitance @ Vr, F :

1pF @ 20V 1MHz

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Voltage :

1V

Peak Non-Repetitive Surge Current :

1A

Voltage - Rated DC :

70V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Form :

Gull wing

Published :

2006

Max Current Rating :

200mA

Width :

1.24mm

Radiation Hardening :

No

Number of Elements :

1

HTS Code :

8541.10.00.60

Base Part Number :

MMBD770

Diode Capacitance-Max :

1pF

Factory Lead Time :

2 Weeks

Peak Reverse Current :

200nA

Pbfree Code :

yes

Power Dissipation :

120mW

Number of Terminations :

3

Pin Count :

3

Additional Feature :

LOW REVERSE LEAKAGE

Max Repetitive Reverse Voltage (Vrrm) :

70V

Diode Type :

Schottky - Single

Frequency Band :

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Output Current :

200mA

ECCN Code :

EAR99

Lead Free :

Lead Free

Reverse Voltage (DC) :

70V

Surface Mount :

yes

Element Configuration :

Single

Height :

850μm

Diode Element Material :

SILICON

Current Rating :

1A

RoHS Status :

ROHS3 Compliant

Max Reverse Leakage Current :

200nA

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Number of Pins :

3

Max Surge Current :

1A

Forward Current :

200mA

Polarity :

Standard

Operating Temperature :

-55°C~125°C TJ

Length :

2.1mm

Peak Reflow Temperature (Cel) :

260