MLD1N06CLT4G
- Mfr.Part #
- MLD1N06CLT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IC MOSFET POWER N-CH 1A 65V DPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Special Purpose
- Rise Time :
- 4ns
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Drain to Source Resistance :
- 750mOhm
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 59V
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 10V
- Continuous Drain Current (ID) :
- 1A
- REACH SVHC :
- No SVHC
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Drain Current-Max (Abs) (ID) :
- 1A
- Nominal Vgs :
- 1.5 V
- Series :
- SMARTDISCRETES™
- Voltage - Rated DC :
- 62V
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Base Part Number :
- MLD1N06C
- Max Power Dissipation :
- 40W
- Min Operating Temperature :
- -55°C
- JESD-609 Code :
- e3
- Power Dissipation :
- 40W
- Fall Time (Typ) :
- 3 ns
- Published :
- 2006
- Number of Elements :
- 1
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 1.2 ns
- Turn-Off Delay Time :
- 4 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Resistance :
- 750mOhm
- Applications :
- GENERAL PURPOSE
- Threshold Voltage :
- 1.5V
- Element Configuration :
- Single
- Pin Count :
- 3
- Current Rating :
- 1A
- Lifecycle Status :
- OBSOLETE (Last Updated: 14 hours ago)
- Drain to Source Voltage (Vdss) :
- 62V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN, N-Channel Gate-Drain, Source Clamp
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MLD1N06CLT4G

MLD1N06CLT4G datasheet pdf and Transistors - Special Purpose product details from ON Semiconductor stock available at
MLD1N06CLT4G Description
The MLD1N06CLT4G is a Power MOSFET 1 Amp, 62 Volts, Logic Level. The MLD1N06CLT4G is intended for applications that call for a robust power switching device with short circuit protection that may be connected directly to a microcontroller (MCU). Applications, where a strong inrush current or a shorted load state may arise, are ideal, such as in incandescent light drivers and fuel injector drivers for automobiles.
In addition to low on-resistance technology, this logic level power MOSFET has integrated gate-source clamping for ESD protection, gate-drain clamping for overvoltage protection, and current limiting for short circuit protection. When connecting to an MCU's output, no additional gate series resistance is needed, however, to prevent a floating gate state, a 40 k gate pulldown resistor is advised.
Without using external transient suppression components, the device can be deployed thanks to the internal Gate-Source and Gate-Drain clamps. The MOSFET input is shielded from electrostatic voltage stress up to 2.0 kV by the Gate-Source clamp. The MOSFET drain is shielded by the Gate-Drain clamp from the avalanche stress that results from inductive loads. Their distinctive architecture offers voltage clamping that is practically temperature independent.
MLD1N06CLT4G Features
-
Pb?Free Package is Available
-
Maximum single pulse avalanche energy (EAS)
-
On-resistance (RDS(ON))
-
Maximum junction temperature (TJ(max))
-
Continuous drain current (ID)
MLD1N06CLT4G Applications
-
Switch, buck and synchronous rectification
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
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