MJL3281A
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- Mfr.Part #
- MJL3281A
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS NPN 260V 15A TO264
- Stock
- 23,701
- In Stock ：
- 23,701
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Frequency :
- 30MHz
- Collector Emitter Breakdown Voltage :
- 260V
- Max Collector Current :
- 15A
- Length :
- 20.3mm
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 10 Weeks
- Packaging :
- Tube
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 200V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 60
- Power Dissipation :
- 200W
- Max Power Dissipation :
- 200W
- Surface Mount :
- No
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 230V
- Package / Case :
- TO-264-3, TO-264AA
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2000
- Transition Frequency :
- 30MHz
- Width :
- 5.3mm
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Collector Emitter Saturation Voltage :
- 3V
- Collector Emitter Voltage (VCEO) :
- 200V
- Operating Temperature :
- -65°C~150°C TJ
- Height :
- 26.4mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Current Rating :
- 15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Gain Bandwidth Product :
- 30MHz
- Terminal Finish :
- Tin (Sn)
- Datasheets
- MJL3281A
MJL3281A Documents
NPN -65°C~150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole
MJL3281AG Overview
In this device, the DC current gain is 75 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 3V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 1A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).30MHz is present in the transition frequency.Maximum collector currents can be below 15A volts.
MJL3281AG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 30MHz
MJL3281AG Applications
There are a lot of ON Semiconductor
MJL3281AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MJL3281AG | onsemi | 1 | TRANS NPN 260V 15A TO264 |
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