MJF6388
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- Mfr.Part #
- MJF6388
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A TO220FP
- Stock
- 28,559
- In Stock ：
- 28,559
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 3000
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA
- Max Collector Current :
- 10A
- Transition Frequency :
- 20MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Width :
- 4.9mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Height :
- 9.24mm
- Number of Elements :
- 1
- Packaging :
- Tube
- Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 30V
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 3000 @ 3A 4V
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Additional Feature :
- UL RECOGNIZED
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 10V
- JESD-609 Code :
- e3
- Length :
- 10.63mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Published :
- 1997
- Current Rating :
- 10A
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-220-3 Full Pack
- Case Connection :
- Isolated
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Datasheets
- MJF6388
NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
MJF6388G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 3000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 100mA, 10A.Continuous collector voltages of 10A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 20MHz.During maximum operation, collector current can be as low as 10A volts.
MJF6388G Features
the DC current gain for this device is 3000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 10V
the current rating of this device is 10A
a transition frequency of 20MHz
MJF6388G Applications
There are a lot of ON Semiconductor
MJF6388G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MJF6388G | onsemi | 10,003 | TRANS NPN DARL 100V 10A TO220FP |
| MJF6668 | onsemi | 6,786 | TRANS PNP DARL 100V 10A TO220FP |
| MJF6668G | onsemi | 13,104 | TRANS PNP DARL 100V 10A TO220FP |
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