MJ4502G
- Mfr.Part #
- MJ4502G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 30A TO204
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- ECCN Code :
- EAR99
- Power Dissipation :
- 200W
- Current Rating :
- 30A
- Number of Terminations :
- 2
- Factory Lead Time :
- 2 Weeks
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 800mV
- Transistor Element Material :
- SILICON
- hFE Min :
- 25
- Height :
- 8.51mm
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Package / Case :
- TO-204AA, TO-3
- Number of Pins :
- 2
- Pin Count :
- 2
- Voltage - Rated DC :
- -100V
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Transition Frequency :
- 2MHz
- Max Power Dissipation :
- 200W
- REACH SVHC :
- No SVHC
- Frequency :
- 2MHz
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 4V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 90V
- Width :
- 26.67mm
- Collector Base Voltage (VCBO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Length :
- 39.37mm
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 2MHz
- Terminal Position :
- BOTTOM
- Packaging :
- Tray
- Collector Emitter Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Published :
- 2000
- Mount :
- Through Hole
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 30A
- Radiation Hardening :
- No
- Datasheets
- MJ4502G

PNP -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ4502G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 7.5A 2V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 750mA, 7.5A.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 30A.A transition frequency of 2MHz is present in the part.Collector current can be as low as 30A volts at its maximum.
MJ4502G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ4502G Applications
There are a lot of ON Semiconductor
MJ4502G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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