MIC4225YMME-TR

Manufacturer :

Microchip Technology

Product Category :

Gate Drivers

RoHS :

Compliant

JESD-30 Code :

S-PDSO-G8

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Supplier Device Package :

8-MSOP-EP

Terminal Pitch :

0.65 mm

Mounting Style :

SMD/SMT

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad

Pin Count :

8

Brand :

Microchip Technology

Input Type :

Inverting, Non-Inverting

Base Part Number :

MIC4225

Temperature Grade :

Automotive

Min Operating Temperature :

-40°C

Number of Functions :

1

Terminal Finish :

Matte Tin (Sn) - annealed

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Product Status :

Active

Lifecycle Status :

Production (Last Updated: 2 years ago)

Logic Voltage - VIL, VIH :

0.8V 2.4V

Package :

Tape and Reel (TR)

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Driven Configuration :

Low-Side

Published :

2009

Rise / Fall Time (Typ) :

15ns 15ns

ECCN Code :

EAR99

Manufacturer :

Microchip

Surface Mount :

yes

Terminal Position :

Dual

Operating Temperature :

-40°C~125°C TJ

Length :

3 mm

Product Type :

Gate Drivers

Number of Outputs :

2

Packaging :

Tape and Reel (TR)

Voltage - Supply :

4.5V~18V

Max Output Current :

4A

Power Supplies :

4.5/18 V

Base Product Number :

MIC4225

Qualification Status :

Not Qualified

Output Peak Current Limit-Nom :

4 A

Subcategory :

PMIC - Power Management ICs

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Terminals :

8

Current - Peak Output (Source, Sink) :

4A 4A

Width :

3 mm

Max Operating Temperature :

125°C

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Number of Drivers :

2

Package Shape :

Square

Seated Height-Max :

1.04 mm

Technology :

Si

High Side Driver :

No

Channel Type :

Independent

Series :

--

Product :

MOSFET Gate Drivers

HTS Code :

8542.39.00.01

Product Category :

Gate Drivers

Gate Type :

N-Channel MOSFET