MBRD660CTT4G

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Current - Reverse Leakage @ Vr :

100μA @ 60V

Diode Element Material :

SILICON

Packaging :

Cut Tape (CT)

Max Surge Current :

75A

Max Operating Temperature :

175°C

Diode Type :

Schottky

Max Repetitive Reverse Voltage (Vrrm) :

60V

Halogen Free :

Halogen Free

HTS Code :

8541.10.00.80

Additional Feature :

FREE WHEELING DIODE

Output Current-Max :

3A

Number of Pins :

3

Voltage - Forward (Vf) (Max) @ If :

700mV @ 3A

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Mounting Type :

Surface Mount

Peak Reverse Current :

100μA

Max Reverse Leakage Current :

100μA

Height :

2.38mm

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Contact Plating :

Tin

Series :

SWITCHMODE™

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Operating Temperature - Junction :

-65°C~175°C

Diode Configuration :

1 Pair Common Cathode

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

Width :

6.22mm

Lead Free :

Lead Free

Pbfree Code :

yes

REACH SVHC :

No SVHC

Published :

2011

Base Part Number :

MBRD660CT

Application :

FAST RECOVERY POWER

Max Reverse Voltage (DC) :

60V

Element Configuration :

Common Cathode

Terminal Position :

Single

Surface Mount :

yes

ECCN Code :

EAR99

Forward Voltage :

900mV

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Forward Current :

6A

Current Rating :

6A

Number of Elements :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Phases :

1

Average Rectified Current :

3A

Peak Non-Repetitive Surge Current :

75A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Forward Surge Current (Ifsm) :

75A

Voltage - Rated DC :

60V