MBRD660CTT4
- Mfr.Part #
- MBRD660CTT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- DIODE SCHOTTKY 60V 3A DPAK
- Stock
- 9,226
- In Stock :
- 9,226
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- Manufacturer :
- onsemi
- Product Category :
- Diodes - Rectifiers - Arrays
- Voltage - Forward (Vf) (Max) @ If :
- 700mV @ 3A
- Forward Voltage :
- 900mV
- Forward Current :
- 6A
- Radiation Hardening :
- No
- Series :
- SWITCHMODE™
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Packaging :
- Cut Tape (CT)
- Diode Type :
- Schottky
- Max Reverse Voltage (DC) :
- 60V
- Max Surge Current :
- 75A
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Terminal Position :
- Single
- Peak Reverse Current :
- 100μA
- Element Configuration :
- Common Cathode
- Height :
- 2.38mm
- Lead Free :
- Lead Free
- Current Rating :
- 6A
- Base Part Number :
- MBRD660CT
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Average Rectified Current :
- 3A
- Contact Plating :
- Tin
- Pin Count :
- 3
- Diode Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Number of Elements :
- 2
- Application :
- FAST RECOVERY POWER
- Max Repetitive Reverse Voltage (Vrrm) :
- 60V
- Output Current-Max :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Max Reverse Leakage Current :
- 100μA
- Additional Feature :
- FREE WHEELING DIODE
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 175°C
- Number of Pins :
- 3
- Voltage - Rated DC :
- 60V
- Max Forward Surge Current (Ifsm) :
- 75A
- Current - Reverse Leakage @ Vr :
- 100μA @ 60V
- Min Operating Temperature :
- -65°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.73mm
- Diode Configuration :
- 1 Pair Common Cathode
- Halogen Free :
- Halogen Free
- HTS Code :
- 8541.10.00.80
- Operating Temperature - Junction :
- -65°C~175°C
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Surface Mount :
- yes
- Number of Phases :
- 1
- Peak Non-Repetitive Surge Current :
- 75A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- Datasheets
- MBRD660CTT4

Schottky Rectifier Diode 1 Pair Common Cathode Fast Recovery =< 500ns, > 200mA (Io) -65°C~175°C 3A 60V-DC 2-Element TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount
MBRD660CTT4G Overview
When the forward voltage is set to 900mV, this device will operate.Array is capable of supporting a maximum output voltage of 3A.Monarrayoring the surge current and preventing array from exceeding 75A should be the rule.When the forward voltage is set to 6A, this device will operate.A current of 6A can be drawn from the part.Devices like this one are powered with a reverse voltage peak of 100μA.Its maximal reverse leakage current is 100μA, which is the current from that semiconductor device when the device is reverse biased.
MBRD660CTT4G Features
900mV forward voltage
a maximum output voltage of 3A
a peak voltage of 100μA
a reverse voltage peak of 100μA
MBRD660CTT4G Applications
There are a lot of ON Semiconductor
MBRD660CTT4G applications of rectifier diode array.
- Rectifier for drives applications
- Crowbar applications
- Rectifiers for UBS
- Battery chargers
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters
- General Rectification
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