MBRB60H100CTT4G

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Arrays

Diode Element Material :

SILICON

Published :

2007

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Voltage - Forward (Vf) (Max) @ If :

840mV @ 30A

Max Surge Current :

350A

Forward Voltage :

980mV

REACH SVHC :

No SVHC

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Peak Reverse Current :

100μA

Series :

SWITCHMODE™

Height :

4.83mm

Terminal Form :

Gull wing

Radiation Hardening :

No

Max Reverse Voltage (DC) :

100V

Number of Terminations :

2

Length :

10.29mm

Contact Plating :

Tin

Max Repetitive Reverse Voltage (Vrrm) :

100V

Diode Type :

Schottky

Additional Feature :

LOW POWER LOSS

Min Operating Temperature :

-65°C

Terminal Position :

Single

Number of Pins :

3

Number of Elements :

2

Halogen Free :

Halogen Free

Element Configuration :

Common Cathode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Forward Current :

30A

Lead Free :

Lead Free

Current - Reverse Leakage @ Vr :

10μA @ 100V

Max Operating Temperature :

175°C

Diode Configuration :

1 Pair Common Cathode

Application :

EFFICIENCY

Base Part Number :

MBRB60H100CT

Operating Temperature - Junction :

175°C Max

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Forward Surge Current (Ifsm) :

350A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Surface Mount :

yes

HTS Code :

8541.10.00.80

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Phases :

1

Pbfree Code :

yes

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Average Rectified Current :

30A

Factory Lead Time :

9 Weeks

Width :

9.65mm

Max Reverse Leakage Current :

100μA

Peak Non-Repetitive Surge Current :

350A