MBR40035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Mount :

Chassis Mount

Max Operating Temperature :

175°C

Published :

2003

Terminal Position :

UPPER

Min Operating Temperature :

-40°C

RoHS Status :

RoHS Compliant

Current - Average Rectified (Io) :

400A DC

Diode Configuration :

1 Pair Common Anode

Forward Voltage :

650mV

Number of Terminations :

2

Number of Pins :

2

Number of Phases :

1

Element Configuration :

Common Anode

Forward Current :

200A

Max Reverse Voltage (DC) :

35V

Operating Temperature - Junction :

-55°C~150°C

Mounting Type :

Chassis Mount

Application :

Power

Max Reverse Leakage Current :

1μA

Pbfree Code :

yes

Average Rectified Current :

400A

Number of Elements :

2

Current - Reverse Leakage @ Vr :

1mA @ 35V

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Package / Case :

Twin Tower

Max Surge Current :

3kA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Diode Element Material :

SILICON

ECCN Code :

EAR99

Terminal Form :

UNSPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Repetitive Reverse Voltage (Vrrm) :

35V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

HTS Code :

8541.10.00.80

REACH SVHC :

No SVHC

Voltage - Forward (Vf) (Max) @ If :

700mV @ 200A

Peak Reverse Current :

1A

Factory Lead Time :

6 Weeks

Diode Type :

Schottky, Reverse Polarity

Speed :

Fast Recovery =< 500ns, > 200mA (Io)