MBR12045CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Peak Reverse Current :

1A

Diode Type :

Schottky, Reverse Polarity

Operating Temperature - Junction :

-55°C~150°C

Forward Current :

120A

Published :

2010

ECCN Code :

EAR99

Application :

Power

Package / Case :

Twin Tower

Terminal Position :

UPPER

Lifecycle Status :

Production (Last Updated: 4 months ago)

Min Operating Temperature :

-40°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-PUFM-X2

Number of Terminations :

2

HTS Code :

8541.10.00.80

Diode Element Material :

SILICON

Number of Elements :

2

Max Surge Current :

800A

Max Reverse Voltage (DC) :

45V

Current - Reverse Leakage @ Vr :

3mA @ 20V

Max Repetitive Reverse Voltage (Vrrm) :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Element Configuration :

Common Anode

Current - Average Rectified (Io) :

120A DC

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Average Rectified Current :

120A

Mounting Type :

Chassis Mount

Voltage - Forward (Vf) (Max) @ If :

650mV @ 60A

Max Reverse Leakage Current :

1μA

Output Current-Max :

60A

Mount :

Chassis Mount

Factory Lead Time :

6 Weeks

Number of Phases :

1

Diode Configuration :

1 Pair Common Anode