MBR12035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Operating Temperature - Junction :

-55°C~150°C

Surface Mount :

No

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Terminations :

2

Diode Type :

Schottky

Mounting Type :

Chassis Mount

Packaging :

Bulk

Terminal Position :

UPPER

Voltage - DC Reverse (Vr) (Max) :

35V

Voltage - Forward (Vf) (Max) @ If :

650mV @ 120A

Factory Lead Time :

4 Weeks

Operating Temperature (Max) :

150°C

Diode Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Application :

Power

Non-rep Pk Forward Current-Max :

800A

ECCN Code :

EAR99

Package / Case :

Twin Tower

Current - Average Rectified (Io) :

120A DC

Pbfree Code :

yes

Rep Pk Reverse Voltage-Max :

35V

Number of Phases :

1

Terminal Form :

UNSPECIFIED

Output Current-Max :

60A

RoHS Status :

RoHS Compliant

Current - Reverse Leakage @ Vr :

3mA @ 20V

JESD-30 Code :

R-PUFM-X2

HTS Code :

8541.10.00.80

Number of Elements :

2

Diode Configuration :

1 Pair Common Anode

Reverse Current-Max :

1000μA